Power Supplies

Mazda and Rohm have signed a deal to develop GaN-based automotive power electronics. “Compared to conventional silicon power semiconductors, GaN can reduce power conversion losses and contribute to the miniaturisation of components through high-frequency operation,” according to Rohm. “Both companies will collaborate to transform these strengths into a package that considers the entire vehicle, and into solutions that innovate in ...

Vishay is claiming industry’s lowest Rds(on).Qg and Rds(on).Co(er) figures-of-merit for its latest 650V super-junction mosfet. The typical figures are 3.74ΩnC and 8ΩpF respectively. SiHK050N65E is an n-channel device aimed at power factor correction and subsequent dc-dc converter blocks up to 6kW. Typical on-resistance is 48mΩ (25°C, 10Vgs) and gate charge can be 78nC (16A, 520V, 10Vgs). “The device addresses 200 ...

Vicor is aiming at 48V to 12V conversion with a family of surface-mount dc-dc converter modules ranging from 750W to 2kW. “Power delivery networks are making a decisive shift from 12V to 48V architectures to take advantage of higher efficiency,” according to the company. “The benefits of using 48V have been illustrated in high-performance computing, automotive and in many other ...

Delta has introduced 2.5kW medical ac-dc power supply to its range in 24, 36 and 48V vesions. MEB-2K5A PSUs, as they will be know, measure 127 x 271 x 40.5mm, have 5V 2A stand-by output, and are conformally coated to increase reliability. “With PMBus version 1.3 compatibility, MEB-2K5A is ideal for applications such as CT scanners, surgical robots, collaborative robots  ...

Nexperia has launched a 1,200V 30mΩ silicon carbide mosfet in a top-side-cooled plastic package with a 18.5 x 14mm footprint. The leaded package is 3.5mm thick is a SOT8107-2, according to the company, which has branded it ‘X.PAK’. The keads have a 1.27mm pitch. “This package, with its compact form factor, combines the assembly benefits of SMD with the cooling efficiency ...

Nexperia has introduced four 40V bi-directional GaN power transistors. With 5V gate drive, maximum on-resistance values of 1.2, 4.8, 8 or 12mΩ are available – see table below – and operation is up to 125°C. Packaging is VQFN16, WLCSP22, WLCSP16 or WLCSP12. They “support overvoltage protection, load switching and battery management systems in mobile devices and laptop computers”, according to ...

TDK has shrunk its 500V gate drive transformers to 11 x 13mm and 11mm high, smaller than its existing E10EM series. The new parts, called the EP9 series and aimed at both IGBTs and mosfets, are built on a MnZn ferrite core with surface-mount L-pin construction. Creepage and clearance is 5mm, peak withstanding is 2.5kVac 50Hz, and coupling capacitance is ...

Infineon is introducing a radiation-tolerant p-channel plastic-packged power mosfet for low-earth-orbit (LEO) space applications “with radiation performance suitable for missions lasting two to five years”, it said. It is a 60V p-channel mosfet, and joins four n-channel space devices for 60V or 150V use in either TO247 or D2PAK plastic packaging. The p-channel, called BUP06CP038F-01, comes in DPAK (TO252) form ...

Rohm has formerly announced the TOLL-packaged 650V GaN hemts that Electronics Weekly featured in a GaN driving trechnology article last week. To get the devices, called GNP2070TD-Z, into the increasingly popular ~12 x 10 x 2.4mm TOLL (TO-lead-less) package, which is finding use in high power industrial and automotive equipment, Rohm chose to out-source the back-end to ATX Semiconductor (Weihai) ...

Toshiba has announced a 600V super-junction mosfet with a maximum on-resistance of 24mΩ in a TO-247 package (20mΩ typ). Typical gate-drain charge is 37nC (400Vd, 10Vg, 80A) and total gate charge (gate-source + gate-drain) is 140nC. Reverse recovery for the intrinsic diode is 8.5µC and 425ns, both at 400V, 40A, 100A/µs and Vg=0 . “TK024N60Z1 uses the DTMOSVI 600V process ...