10 x 12mm 650V mosfet hits 3.74ΩnC and 8ΩpF

Vishay is claiming industry’s lowest Rds(on).Qg and Rds(on).Co(er) figures-of-merit for its latest 650V super-junction mosfet.

Vishay SiHK050N65E 650V mosfet

The typical figures are 3.74ΩnC and 8ΩpF respectively.

SiHK050N65E is an n-channel device aimed at power factor correction and subsequent dc-dc converter blocks up to 6kW.


Typical on-resistance is 48mΩ (25°C, 10Vgs) and gate charge can be 78nC (16A, 520V, 10Vgs).


“The device addresses 200 to 277Vac inputs and the Open Compute Project’s ORV3 standard,” said Vishay. It can “address the specific titanium efficiency requirements in server power supplies, or reach 96 % peak efficiency, [and] is designed to withstand overvoltage transients in avalanche mode with guaranteed limits through 100% UIS testing.”

For hard switching, such as in PFCs and two-switch forward converters, typical effective output capacitances Co(er) and Co(tr) are 167pF and 1.119nF respectively.

Packaging is 10 x 12mm surface-mount TOLL, and a Kelvin connection is provided for improved gate drive.

This is a general-purpose device, with applications foreseen in servers, edge computing, discharge lamps, solar inverters, welding equipment and motor drives.

Find Vishay’s SiHK050N65E product page here

Steve Bush

Steve Bush is the long-standing technology editor for Electronics Weekly, covering electronics developments for more than 25 years. He has a particular interest in the Power and Embedded areas of the industry. He also writes for the Engineer In Wonderland blog, covering 3D printing, CNC machines and miscellaneous other engineering matters.

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