Discretes

Nexperia has created ESD protection diodes for 48V vehicle communications networks. “Until now, automotive equipment manufacturers lacked suitable ESD protection solutions specifically designed for 48V data lines,” claimed Nexperia head of protection devices Alexander Benedix. “As a result, they often had to rely on workarounds – either including an additional 12 V power rail or connecting several lower-voltage protection diodes ...

Rohm has designed a mosfet for high-current 48V hotswap controllers in data centres. RY7P250BM is a 100V device nominally rated at 300A and comes in an 8 x 8mm DFN8080 package. “In hot-swap circuits used to safely replace modules while servers remain powered on, mosfets are required that offer both wide safe operating area and low on-resistance to protect against ...

STMicroelectronics is aiming at domestic induction hobs and microwaves with a 1.6kV IGBT in a long lead TO-247 package. “STGWA30IH160DF2 IGBT combines high thermal performance with efficiency in soft-switching topologies and easy paralleling,” claimed the company. Nominal current rating is 30A (120A pulsed), and the device works with its junction up to 175°C. Thermal resistance is 0.36°C/W junction-to-case, and 0.81°C/W for ...

Infineon Technologies has announced a rad-hardened GaN transistor designed to operate in harsh space environments. It “is the first in-house manufactured GaN transistor to earn the highest quality certification of reliability assigned by the United States Defense Logistics Agency to the JANS specification MIL-PRF-19500/794”, according to the company. “The gallium nitride hemts [high electron mobility transistors] are engineered for mission-critical ...

Toshiba has introduced a set of industrial-grade 650V SiC mosfets in 8 x 8mm DFN packaging. Of the four new devices, the company picks TW054V65C as its poster child for low turn-on and turn-off losses: 122 ad 58μJ respectively when a pair are used in a 400V 20A half-bridge* – said to be ~55% and 25% less than the company’s ...

Rhopoint Components is stocking precision current sensing resistors from VPG Foil Resistors. The 1W surface-mount RBF series measures 6.3 x 3.2mm and offers resistances between 0.01Ω and 1Ω. Tolerances down to 0.5% are available between 0.1 and 1Ω, or down to 1% from 10mΩ to 100mΩ. All the series are available with a temperature coefficient of ±25ppm/°C between -25 and ...

EPC aims to displace silicon mosfets from secondary-side synchronous rectifiers with its latest 40V GaN power transistor, designed specifically for 48V to 12V LLC dc-dc converters. “With the EPC2366, and upcoming lower voltage parts, we are expanding the GaN beach-head across low-voltage applications that have long been dominated by silicon,” said EPC CEO Alex Lidow. Packaged in 3.3 x 2.6mm ...

Infineon has launched its CoolSiC MOSFET 750 V G2 technology, designed to deliver improved system efficiency and increased power density in automotive and industrial power conversion applications. The technology offers a granular portfolio with typical R DS(on) values up to 60 mΩ at 25°C, making it suitable for a wide range of applications, including on-board chargers (OBCs), DC-DC converters, auxiliaries ...

Bourns has won a IEC 61051-2 certificate of compliance for its UL 1449 listed IsoMOV surge protection devices. These are hybrid protectors, that combine a MOV (metal oxide varistor) with a gas discharge tube (GDT) in a through-hole disc-style package. The GDT blocks leakage currents through the MOV that may lead to premature failure, explained the company. “The comprehensive documentation ...

WeEn Semiconductors has unveiled a pair of 2,000V rectifiers in TO247 packaging, one rated at 90A and the other at 60A. They are the WND90P20W  and the WND60P20W respectively. “These devices are engineered to mitigate voltage spikes in electric vehicle charging loads,” according to the company, which went on to emphasise their  forward voltage drop and thermal resistance. Digging into ...