Discretes

Microchip has achieved JANSF qualification for a 100V n-channel mosfet to to 300krad (Si) TID (total ionising dose), and completed its family of radiation-hardened power mosfets to MIL-PRF-19500/746 slash-sheet specification. “The JANS qualification represents the highest level of screening and acceptance requirements, ensuring the superior performance, quality and reliability of discrete semiconductors for aerospace, defense and spaceflight applications,” according to ...

SemiQ has released three 1.2kV three-phase silicon carbide mosfet bridges in 62.8 x 33.8 x 15mm press-fit six-pack modules. 20mΩ 263W GCMX020A120B2T1P 40mΩ 160W GCMX040A120B2T1P 80mΩ 103W GCMX080A120B2T1P Power in this list is the maximum allowable when the case is at 25°C and the junctions are at their maximum of 175°C. Each is tested to over 1,350V with 100% wafer-level ...

Diodes has introduced some 650V SiC Schottky diodes, rated at 4, 6, 8, 10 or 12A. Called the DSCxxA065LP series, they come in a 8 x 8 x 1mm T-DFN8080-4 package. The company claims a leading Qc x Vf figure-of-merit, but does not include the numbers in its data sheets, so Electronics Weekly unleashed its calculator to find typical 25°C ...

For hard-switched power topologies, Infineon is planning a 100V GaN transistors with a integrated Schottky diode. “Due to the lack of body diode in hard-switching applications, GaN-based topologies may incur higher power losses due to the larger effective body diode voltage of GaN devices,” according to the company, which explained: “GaN transistor reverse conduction voltage is dependent on the threshold ...

Rohm has created three n-channel power mosfets in 5 x 6mm DFN packaging. RS7E200BG is a 30V mosfet optimised for both secondary-side ac-dc conversion and hot-swap controllers in 12V enterprise server power supplies. RS7N200BH is an 80V mosfet optimised for secondary ac-dc conversion in 48V server power supplies, as is RS7N160BH. “The DFN5060-8S package increases the internal die size area ...

A worldwide distribution agreement means that Ohmite‘s power resistor range will be available through Arrow Electronics. Ohmite manufactures industrial and surface mount power resistors, load banks, heat sinks and rheostats in the US and Mexico. Its range includes high power, high voltage, current sense and surge resistors for use in transport, industrial, energy and aerospace sectors. In addition to standard ...

Bluetooth LE modules that combine Wi-Fi 6 (802.11ax) and Bluetooth Core 5.4 by Ezurio (formerly known as Laird Connectivity) are available from Mouser Electronics. The Sona NX611 Wi-Fi 6 + Bluetooth LE modules are based on NXP’s IW611 Wi-Fi 6 chipset and boast a data transmission throughput of 500Mbps. The small industrial IoT modules are suitable for use in IoT, ...

Power mosfet and wafer-maker IceMos Technology has pulled-in $22m of series-E funding, including $7.5m from 57 Stars, and money from un-named “earlier stage USA investors” and a “London-based investor”, said IceMos Headquartered in Arizona, IceMos has manufacturing in Northern Ireland, research in Arizona and a design center in Tokyo. Its wafer products include active layers attached to handle wafers using ...

Vishay is claiming industry’s lowest Rds(on).Qg and Rds(on).Co(er) figures-of-merit for its latest 650V super-junction mosfet. The typical figures are 3.74ΩnC and 8ΩpF respectively. SiHK050N65E is an n-channel device aimed at power factor correction and subsequent dc-dc converter blocks up to 6kW. Typical on-resistance is 48mΩ (25°C, 10Vgs) and gate charge can be 78nC (16A, 520V, 10Vgs). “The device addresses 200 ...