Renesas has introduced 100V high-power N-Channel MOSFETs that claim to deliver industry-leading high-current switching performance. Renesas has developed a new MOSFET wafer manufacturing process (REXFET-1) that enables the new devices to reduce on-resistance by 30 percent. The REXFET-1 process also enables the new MOSFETs to offer a 10 percent reduction in Qg characteristics (the amount of charge needed to apply ...
Discretes
20V 160mA photo-relay for semiconductor testers
Toshiba has released a “high-speed” low-voltage photo-relay “particularly suitable for the pin electronics of semiconductor testers”, it said. High-speed? “Turn-on switching time is below 80μs,” according to Toshiba. “Compared to the previous generation – TLP3450 – this represents a 40% improvement.” It has a single normally-open ‘contact’, consisting of back-to-back mosfets making it suitable for switching ac or dc signals. ...
MOSFET enhances noise immunity in power systems
ST has introduced 40V STripFET F8 MOSFETs with standard threshold voltage (VGS(th)), combining the advantages of the enhanced trench gate technology with superior noise immunity for applications with non-logic-level control. The industrial-grade STL300N4F8 and automotive-grade STL305N4F8AG MOSFETs have a drain current rating above 300A and maximum RDS(on) of 1mΩ for efficiency in high-power applications. Enhancing dynamic performance, the total gate ...
1,200V hyper-fast rectifiers at 1A and 3A
Vishay has announced 1A and 3A 1,200V hyperfast rectifiers in 4.2 x 1.4 x 1.08mm SMF (DO-219AB) packaging with a minimum of 2.2mm creepage. Of the four FREDs (fast recovery epitaxial diodes), two of them are automotive grade and the others are for industrial use: VS-E7FX0112-M3 and VS-E7FX0212-M3 for industry, and VS-E7FX0112HM3 and VS-E7FX0212HM3 for vehicles (see table below). “The ...
1,700V GaN mosfet IC from Power Integrations
Power Integrations has announced industry’s first 1,700V GaN transistor – as far as the company can tell. It is integrated within its latest series of InnoMux-branded multi-output fly-back ac-dc converter ICs, in his case intended to work from 1,000V rails in industrial applications. “InnoMux 2 is the first vehicle because a lot of applications that need 1,700V are industrial with ...
PTC thermistors handle 340J in-rush in electric vehicles
Vishay has introduced an automotive-rated series of positive temperature coefficient (PTC) in-rush current thermistors that can absorb up to 340J, designed for dc link charging and energy discharge circuits. Called PTCEL67R, they are through-hole disc devices, available with 25°C resistances (R25 values) from 150Ω to 1.5kΩ and handling up to 1.2kVdc. They can handle 180J at 85°C and 130J at ...
Transportation trends
Silicon timing boosts automotive reliability and safety, and is essential for autonomous driving, says Sumeet Kulkani. Four major trends are shaping the future of transportation. These are electrification, shared ownership, active safety systems and driving automation. They are having a major impact on the way vehicles are being designed, demanding more digital systems on board to handle aspects such as ...
2kV 80A SiC Schottky
Infineon is looking towards 1,500V dc links with a 2kV 80A silicon carbide Schottky diode. IDYH80G200C5 is the 80A 2,000V part, which comes packaged in four-lead TO-247PLUS-4-HCC, with 14mm creepage and 5.4mm clearance. Only two of the leads are used – the two adjacent to the creepage slot. The cathode is connected to the separated pin as well as the ...
Astute Group expands opto-electronics with Isocom Components
Astute Group has signed a distribution agreement with British opto-electronics manufacturer, Isocom Components. The franchised distributor will offer the manufacturer’s optocouplers, optoswitches, photo triacs, and photo mosfets. Graham McBeth, chairman of Isocom Components, remarked on Astute’s “excellent relationships with a number of the largest customer groups and strong design influence, particularly in Europe”. “Astute can help customers navigate the complexities ...
1,200V SiC Schottkys in TO-247
Toshiba has added ten 1.2kV silicon carbide Schottky diodes to its collection, half in TO-247-2L packaging, and half in TO-247, claiming a forward voltage of typically 1.27V. A quick dip in the data sheets reveals that the TRS20H120H drops 1.27V (1.45V max) at 25°C and its maximum current of 20A. This typically rises to 1.64V at 150°C. This is one ...