Electronics Weekly
It “is the first in-house manufactured GaN transistor to earn the highest quality certification of reliability assigned by the United States Defense Logistics Agency to the JANS specification MIL-PRF-19500/794”, according to the company. “The gallium nitride hemts [high electron mobility transistors] are engineered for mission-critical applications in on-orbit space vehicles, manned space exploration and deep space probes.”
JANSG2N7697UFHC is a 100V 52A transistor, typically with 4mΩ on-resistance and 8.8nC total gate charge (6mΩ max, 13nC max), in a 7.1 x 5.3mm hermetic ceramic surface mount package.
For single event effects it is rated at LET (GaN) = 70MeV.cm2/mg (Au ion), and it is screened for to 500krad(Si) TID (total ionising dose).
“DLA JANS certification requires rigorous levels of screening and ‘quality of service class identifiers’ to ensure the performance, quality, and reliability required for space flight applications,” it said. “Infineon is also running multiple lots prior to full JANS production release to ensure long term manufacturing reliability.”
There are two similar devices, not JANS certified, but screened to 100 (IG1NT052N10R) or 500krad (IG1NT052N10G) TID for COTS (commercial off-the-shelf) use, and there are also engineering samples plus evaluation boards.
The JANS device is expected to be available in the summer, and there are other JANS-qualified parts in Infineon’s pipeline.
Find all three rad hardened Gan devices on this Infineon web page
