HEMT

Infineon Technologies has announced a rad-hardened GaN transistor designed to operate in harsh space environments. It “is the first in-house manufactured GaN transistor to earn the highest quality certification of reliability assigned by the United States Defense Logistics Agency to the JANS specification MIL-PRF-19500/794”, according to the company. “The gallium nitride hemts [high electron mobility transistors] are engineered for mission-critical ...

Navitas Semiconductor is aiming at motors up to 600W with a GaN motor drive IC. “Specifically designed for motor drive applications, this integrated solution combines two GaN FETs in a half-bridge configuration with drive, control, sensing and autonomous protection,” according to the company. Called NV6288, it is a 650V part with two 120mΩ GaN HEMTs in an 8 x 10mm ...

Nexperia has introduced four 40V bi-directional GaN power transistors. With 5V gate drive, maximum on-resistance values of 1.2, 4.8, 8 or 12mΩ are available – see table below – and operation is up to 125°C. Packaging is VQFN16, WLCSP22, WLCSP16 or WLCSP12. They “support overvoltage protection, load switching and battery management systems in mobile devices and laptop computers”, according to ...

Distributor Rutronik is stocking an isolated single-channel gate driver for GaN hemts that comes in a 4.9 x 6 x 1.65mm SOP-JW8 package. Made by Rohm and called BM6GD11BFJ-LB, they have “an isolation voltage of up to 2,500Vrms, a minimum input-output latency of 60ns and a minimum input pulse width of 65ns”, said Rutronik. “Under-voltage lock-out is integrated into the ...

For the gate drivers of high-power IGBTs, mosfets, SiC mosfets and GaN hemts, Infineon has introduced an isolated power supply IC that can generate asymmetric output voltage rails. Each member of the 2EP1xxR family, as it will be known, has a full bridge of mosfets at its output for driving both ends of a transformer primary, whose secondary can be ...

Gallium nitride-based LEDs and power transistors can be made on the same IC, according to scientists from Cornell University and the Polish Academy of Sciences. The trick is to used both sides of the wafer, and exploit a quirk of GaN. “GaN is unique among wide-bandgap semiconductors because it has a large electronic polarisation along its crystal axis, which gives ...

Infineon Technologies is to integrate 600 and 700V GaN power hemts alongside gate driver chips inside single packages, in 5 x 6mm or 6 x 8mm SMD packages. IGI70NxxxA2xS is to be a 700V range that combines a single GaN transistor with a single-channel driver in 5 x 6mm PQFN with with 140 to 500mΩ options (IGI70NxxxA2PS), or 6 x ...

EPC Space has created two surface-mount 40V radiation-specified GaN hemts for space use. EPC7001BSH is a 50A (120A pulse) 11mΩ transistor in 5.7 x 3.9mm packaging EPC7002ASH is a 15A (40A pulse) 28mΩ transistor in 3.4 x 3.4mm packaging “Both devices have a total dose radiation rating greater than 1,000kRad(Si) and SEE immunity for LET of 83.7MeV/mg/cm2 with Vds up ...

Infineon has announced a flurry of new power products as a prelude to PCIM in Nuremberg next week, the latest of which is a family of 600V super-junction mosfets. Its eighth generation, “the devices combine the best features of the 600V CoolMOS 7 series and are the successors to the P7, PFD7, C7, CFD7, G7 and S7 product families”, according ...

Infineon has announced bi-directional GaN power transistors at 40, 650 and 850V, and a current sensing GaN transistor. There are two types of bi-directional transistor: The 650 and 850V devices are both normally-off monolithic gate-injection transistors with four operational modes via two separate gates and a substrate terminal, to deliver what the company calls ‘independent isolated control’. “They utilize the ...