Discretes

Infineon is aiming at e-scooters, e-forklifts and other light electric vehicles a pair of TO-leadless mosfet packages. TOLG: TO-leaded with gullwing leads TOLT: TO-leaded top-side cooling Both combine low electrical resitance with a current rating over 300A. TOLG The TOLG (right) package is intended to combines the best features of Infineon’s existing TOLL package (TO-leadless) and the 7pin D2PAK, sharing the ...

Würth has used flat conductors and MnZn cores keep the height of its WE-HCFT 2504 inductor family to 4mm. 1, 2.2, 4.7, 6.8 and 10µH parts are available, at currents up to 33A. Operation is over -40 to +125°C and it complies with AEC-Q200 for automotive use. Use is foreseen in many kinds of dc-dc converters, with Wurth suggesting point-of-load regulators ...

Nexperia has introduced a pair of 0.55mΩ Rds(on) 40V power mosfets in an 8 x 8mm packaging. BUK7S0R5-40H is for automotive use (AEC-Q101-qualified) PSMNR55-40SSH is for industrial applications Both are 500A 375W transistors operating across -55 to +175°C in 1.7mm tall high-reliability LFPAK88 (SOT1235) packages, which use a copper clip to improve heat flow. The 500A rating is up to ~60°C. “500A continuous ...

Rohm is claiming a first for an 8V-tolerant gate on a 150V GaN power transistor. One of the weaknesses of GaN HEMTs is the low voltage rating of their gates – generally ~6V – leaving them vulnerable to damage from transients, particularly as they need a drive of around 5V to operate. “Rohm succeeded in raising the rated gate-source voltage ...

STMicroelectronics is aiming to protect CAN and CAN-FD interfaces with a low-capacitance dual automotive-qualified transient voltage suppressor. Called ESDCAN03-2BM3Y, it has two bidirectional suppressors with a common connection in a 1.1 x 1.0mm package and can clamp as low as 33V with 1A 8/20µs transients, or 37V with a 16A transmission-line pulse – peak 8/20μs pulse rating is 3.3A. It passes ISO ...

UnitedSiC has introduced silicon carbide FETs in D2PAK-7L surface mount packages. They cover 650V and 1,200V operation, and have on-resistances from 30 to 80mΩ (650V) or 40 to 150mΩ (1.2kV). “The D2PAK-7L SiC FETs [have] a Kelvin source connection improving gate drive return performance,” according to the company. “Through the utilisation of silver sintering, die attachments can be done on ...

On Semiconductor announced 1,200V SiC diodes with automotive AECQ101 and industrial qualification at virtual PCIM. Of the diodes, On said: “The new design improves on the first generation SiC diodes thanks to a smaller die size and lower capacitance. NVDSH20120C, NDSH20120C, NVDSH50120C, and NDSH50120C deliver a lower forward voltage drop and a 4x increase in rated current, with a higher ...

Nexperia has extended its trench Schottky rectifier range with devices rated at up to 100V and 20A in the company’s ‘CFP’ packages with an internal copper clip (right), intended to have smaller footprints than SMA, SMB or SMC diodes. “Nexperia’s trench Schottky rectifiers combine low forward voltage and low Qrr to enable efficiency at high switching speeds as needed in switch-mode ...

 Nexperia has decreased on-resistance in its second-generation 650V GaN power transistors. “With Rds(on) performance typically down to 35mΩ [Tj 25°C], the GaN fets target single-phase ac-dc and dc-dc industrial switched mode power supplies ranging from 2kW to 10kW, especially server and telecoms supplies that must meet 80 Plus Titanium efficiency regulations. Branded as ‘H2’ and numbered GAN041-650WSB, they come in TO-247 and are cascode ...

Nexperia has announced a range of ESD protection devices aimed at protecting high-speed interfaces in automotive applications, especially in-vehicle networks for infotainment and communications. There are 12 four-channel devices in the PESD4USBx series, according to the company, with headline figures of  0.25pF line capacitance, <0.05pF line matching and 0.4Ω dynamic resistance. That said, only eight devices show up in the ...