Discretes

At the PCIM exhibition taking place in Nuremberg this week, Diodes has introduced a range of gate drivers that feature a floating high-side driver to simplify the switching of two N-channel mosfets or two IGBTs in a half-bridge configuration. Designed for motor control and power supply applications that require AC and DC motor control boards rated above 100W, and LLC ...

Wolfspeeed has introduced a 1,200V 75mΩ SiC mosfet. Called C3M0075120K, and available from Richardson RFPD, it comes in a four-lead TO-247-4 package – with a separate driver source explainng the fourth pin. The package has 8mm creepage distance between drain and source. The intrinsic diode is saisd to be fast, with low reverse recovery (Qrr). Applications in renewable energy, electric vehicle ...

Infineon has added to its StrongIRFET family with a 40 V MOSFET packaged in D²PAK 7pin+.

Allegro MicroSystems has a three-phase brushless BLDC motor controller for use with N-channel external power mosfets. The AMT49413 can be used as part of three-phase motor drive systems with maximum supply voltages up to 50V. One feature of the devices is a charge pump regulator that provides adequate (>10V) gate drive for battery voltages down to 7V, and allows the ...

Littelfuse’s latest circuit protection devices will provide eight channels of low capacitance common mode and differential mode protection for electronic equipment exposed to electrostatic discharges (ESD). SP8008 range of TVS diode arrays are intended to provide protection against ESD events exceeding the IEC 61000-4-2 contact ESD level of ±8 kV without any performance degradation. A low loading capacitance of 0.3pF ...

Wolfspeed creates an evaluation board for its 1.7kV SiC mosfet, implementing a 48W power supply.

Vishay introduces the first device in its fourth generation of 600V E Series power mosfets, aimed at telecom, industrial, and enterprise power supplies.

Wolfspeed has introduced a 900V, 10mΩ mosfet rated for 196A (case=25°C) for electric vehicles. Four of the devices were used recently in a research project with Ford and the US DoE to create a 400A all-SiC module with 2.5mΩ on-resistance. “Wolfspeed engineers have since demonstrated the capability to use these chips to create an 800A, 1.25mΩ module,” added the firm. ...

These are the smallest precision crystals, at 1.2 x 1.0mm (1210 size) and +/-20ppm across -30 to 85°C, claims Murata, which is aiming them at wireless comms – Wi-Fi and Bluetooth in phones wearables and hearing aids, for example. Called the XRCED series, the firm is trumpeting the equivalent series resistance (ESR) which is 60Ω max. Maximum required drive is 100μW. “With ...

Wolfspeed (part of Cree) has introduced a 1,000V silicon carbide mosfet. C3M0065100K is a 65mΩ device in a four-lead TO-247-4 package – it has a second source pin for the driver. “This package provides lower switching losses with minimal gate circuit ringing due to the Kelvin gate connection,” said Richardson RFPD, which is stocking the mosfet and providing design services. ...