Nexperia has launched a 1,200V 30mΩ silicon carbide mosfet in a top-side-cooled plastic package with a 18.5 x 14mm footprint. The leaded package is 3.5mm thick is a SOT8107-2, according to the company, which has branded it ‘X.PAK’. The keads have a 1.27mm pitch. “This package, with its compact form factor, combines the assembly benefits of SMD with the cooling efficiency ...
Infineon is shipping the CoolSiC Schottky diode 2000 V G5 product family – its first discrete SiC diode with a breakdown voltage of 2000V – in a TO-247-2 package. The product family fits applications with DC link voltages up to 1500 V DC, making it suitable for solar and EV chargers. An evaluation board for the 2000 V CoolSiC product ...
Nexperia has introduced four 40V bi-directional GaN power transistors. With 5V gate drive, maximum on-resistance values of 1.2, 4.8, 8 or 12mΩ are available – see table below – and operation is up to 125°C. Packaging is VQFN16, WLCSP22, WLCSP16 or WLCSP12. They “support overvoltage protection, load switching and battery management systems in mobile devices and laptop computers”, according to ...
Magnachip has added 25 Gen6 SJ MOSFETs with switching speeds improved by approximately 23%, reducing the RSP of applications by about 40% compared to the previous generation, thereby enhancing the Figure of Merit by 40%. Additionally, a Zener diode is embedded between the gate and source to enhance reliability and protect the SJ MOSFETs from ESD-induced damage. The chip sizes ...
Infineon is introducing a radiation-tolerant p-channel plastic-packged power mosfet for low-earth-orbit (LEO) space applications “with radiation performance suitable for missions lasting two to five years”, it said. It is a 60V p-channel mosfet, and joins four n-channel space devices for 60V or 150V use in either TO247 or D2PAK plastic packaging. The p-channel, called BUP06CP038F-01, comes in DPAK (TO252) form ...
Rohm has formerly announced the TOLL-packaged 650V GaN hemts that Electronics Weekly featured in a GaN driving trechnology article last week. To get the devices, called GNP2070TD-Z, into the increasingly popular ~12 x 10 x 2.4mm TOLL (TO-lead-less) package, which is finding use in high power industrial and automotive equipment, Rohm chose to out-source the back-end to ATX Semiconductor (Weihai) ...
Toshiba has announced a 600V super-junction mosfet with a maximum on-resistance of 24mΩ in a TO-247 package (20mΩ typ). Typical gate-drain charge is 37nC (400Vd, 10Vg, 80A) and total gate charge (gate-source + gate-drain) is 140nC. Reverse recovery for the intrinsic diode is 8.5µC and 425ns, both at 400V, 40A, 100A/µs and Vg=0 . “TK024N60Z1 uses the DTMOSVI 600V process ...
Infineon is expanding its portfolio of discrete CoolSiC MOSFETs 650 V with two product families housed in Q-DPAK and TOLL packages. These families, with top- and bottom-side cooling, target high- and medium-power switched-mode power supplies (SMPS) including AI servers, renewable energy, chargers for electric vehicles, e-mobility and humanoid robots, televisions, drives and solid-state circuit breakers. The TOLL package offers Thermal ...
Nexperia is claiming a first for an ESD protection diodes compliant to Open Alliance requirements for 10BASE-T1S automotive Ethernet – a member of the ‘single-pair Ethernet’ family. “The exceptionally low capacitance – 0.4pF – of these diodes means they can also be used to protect higher speed applications deploying 100BASE-T1 or 1000BASE-T1 in-vehicle networks while still maintaining signal integrity,” according ...
Littelfuse is aiming at electric vehicle battery management systems with its latest transient voltage suppressor diodes. Specifically, the unidirectional diodes in the TPSMB-L series are for protecting analogue front-ends and IC in 14 to 20 cell sub-assemblies. There are three parts, all rated for 600W 10/1,000μs pulses (0.01% duty cycle) and come in ~3.6 x 5.3mm DO-214AA (SMB) packaging: Reverse ...
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