40V bi-directional GaN transistors

With 5V gate drive, maximum on-resistance values of 1.2, 4.8, 8 or 12mΩ are available – see table below – and operation is up to 125°C. Packaging is VQFN16, WLCSP22, WLCSP16 or WLCSP12.

They “support overvoltage protection, load switching and battery management systems in mobile devices and laptop computers”, according to the company.

Picking the 1.2mΩ GANB1R2-040QBA, this comes in a 4 x 6mm VQFN which is 0.85mm tall.

1.2mΩ is the maximum value with 5V on the gate and at 25°C. This is typically 0.9mΩ, which typically rises to 1.6mΩ at 125°C.

Total gate charge is 60nC at 10A 20V 25°C.

Up to 100A can be carried continuously (at 25°C), and pulses can reach 500A.

Uni-direction GaN hemts

Along with the bi-directional devices came eight more conventional hemts rated at between 100 and 700V.

The four 100V or150V devices all have max on-resistance below 7mΩ, and are aimed at dc-dc converters, photovoltaic micro-inverters, Class-D audio amplifiers and motor controllers in light electric vehicles.

For driving LEDs and power factor correction are four 700V devices with max Rds(on) between 140 and 350mΩ, and then there is a single 650V 350mΩmax transistor for ac-dc converters.