Electronics Weekly
The leaded package is 3.5mm thick is a SOT8107-2, according to the company, which has branded it ‘X.PAK’. The keads have a 1.27mm pitch.
“This package, with its compact form factor, combines the assembly benefits of SMD with the cooling efficiency of through-hole technology, ensuring optimal heat dissipation.,” claimed Nexperia. “This release addresses the demand from industrial applications for discrete SiC mosfets that harness the advantages of top-side cooling.”
NSF030120T2A0 is the device, rated to handle 68A at 25°C and 48A at 100°C, as well as 160A pulses.
30mΩ is the typical on resistance (18V, 40A, 25°C), while 45mΩ is the maximum, “with the nominal value of Rds(on) increasing only 38% over an operating temperature range from 25°C to 175°C”, said Nexperia.
Gate recommendations are 15V to 18V for ‘on’, and -5V to 0V for ‘off’. Total gate charge is 113nC (-5/+18V, 800V, 40A, 25°C).
The source-drain reverse diode could handle 69A continuously if the case could be kept to 25°C, and is rated for 120A pulses.
Packaged inductance is not specified, but with a 82μH load, turn on is in 19ns, rise in 14ns, turn off in 22ns and fall in 8ns (800V, 40A, -5/+18Vgate, 2.2Ω Rgate, 25°C).
With this die, thermal resistance from junction to case is typically 0.39°C/W (0.51°C/W max)
Two similar devices were announced at the same time in the same package: the 40mΩ NSF040120T2A1 and the 60mΩ NSF060120T2A0.
A 17mΩ is scheduled for April, and automotive qualified versions are in the pipeline.
