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Power Supplies

The latest Electronics Weekly product news on power supplies.

Current sensor integrated into power module

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Asahi Kasei Microdevices  (AKM) and Silicon Austria Labs GmbH (SAL) have completed a joint proof of concept for integrating a current sensor into a power module to be used in automotive applications such as traction inverters and DC-DC converters. The technology enables energy efficiency, as well as compact and lightweight design for high current applications using  SiC power devices. Market ...

PCIM: GaN motor drive ICs

Navitas GaN motor drive IC package

Navitas Semiconductor is aiming at motors up to 600W with a GaN motor drive IC. “Specifically designed for motor drive applications, this integrated solution combines two GaN FETs in a half-bridge configuration with drive, control, sensing and autonomous protection,” according to the company. Called NV6288, it is a 650V part with two 120mΩ GaN HEMTs in an 8 x 10mm ...

5A solid-state relay in SOP-4 package

Vishay 5A solid-state relay in SOP-4 package

Vishay has introduced a 5A 30V solid-state relay in a SOP-4 surface-mount  package. VOR1003M4T is an industrial-grade relay with a 1 Form A (single-pole normally-open) contact. On the output side there are back-to-back mosfets allowing ac or dc to be switched. Typical output-side figures are: 0.7Ω Rds(on), 500μs Ton, 100μsToff and <1μA leakage. These switching times are with 10mA drive ...

Opto-isolated SiC gate driver with active Miller clamp

Toshiba TLP5814H SiC gate driver

Toshiba has introduced an opto-isolated SiC gate driver, that includes an active Miller clamp to tame self-turn-on behaviour in the driven device. Named TLP5814H, it is a “gate driver photocoupler suitable for driving silicon carbide mosfets in industrial equipment like inverters, uninterruptible power supplies and photovoltaic inverters which experience harsh thermal environments”, according to the company. “The Miller clamp circuit ...

Low-drop 2,000V rectifiers in TO247

WeEn TO247 2000V rectifier packaging

WeEn Semiconductors has unveiled a pair of 2,000V rectifiers in TO247 packaging, one rated at 90A and the other at 60A. They are the WND90P20W  and the WND60P20W respectively. “These devices are engineered to mitigate voltage spikes in electric vehicle charging loads,” according to the company, which went on to emphasise their  forward voltage drop and thermal resistance. Digging into ...

Click board includes 85V 10A stepper motor driver

Mikroe PowerStep2 Click stepper driver board

Mikroe has added a smart 85V 10A stepper motor driver to its range of interchangeable ‘Click’ boards. Called Power Step 2 Click, the board “is based on the powerSTEP01, a 1/128 microstepping controller from STMicroelectronics that integrates eight n-channel mosfets with ultra-low Rds(on)”, according to Mikroe. “It features a 5MHz SPI interface, multiple safety protections, and additional control pins for ...

1,200V SiC mosfets are avalanche tested to 800mJ

Semiq GCMX040B120S1-E1 SiC mosfet

SemiQ is aiming at solar inverters with 1,200V SiC mosfets that are avalanche tested to 800mJ, some co-packaged with silicon carbide Schottky diodes – all have intrinsic reverse diodes. There are four devices: GCMS008C120S1-E1 8.4mΩ with Schottky GCMX008C120S1-E1 8.4mΩ GCMS016C120S1-E1 16.5mΩ with Schottky GCMX016C120S1-E1 16.5mΩ The resistance figures here are the channel on-resistance. In addition, two more are avalanche tested ...

200V half-bridge mosfet driver

Littelfuse IXD2012N half-bridge mosfet driver block

Littelfuse has introduced a 200V half-bridge mosfet and IGBT driver with integrated cross-conduction protection logic, said the company. IXD2012NTR, as it will be known, is designed to drive n-channel mosfet gates that need between 10 and 20V, and can supply a minimum of 1.4A pull-up and 1.8A pull-down (both into short-circuits) from either output. Typical figures are 1.9 and 2.3A ...

1,200V silicon carbide three-phase mosfet bridge

Semiq GCMX080A120B2T1P three phase SiC bridge package

SemiQ has released three 1.2kV three-phase silicon carbide mosfet bridges in 62.8 x 33.8 x 15mm press-fit six-pack modules. 20mΩ 263W GCMX020A120B2T1P 40mΩ 160W GCMX040A120B2T1P 80mΩ 103W GCMX080A120B2T1P Power in this list is the maximum allowable when the case is at 25°C and the junctions are at their maximum of 175°C. Each is tested to over 1,350V with 100% wafer-level ...

650V SiC Schottkys from 4A to 12A

Diodes DSCxxA065LP 650V SiC diode

Diodes has introduced some 650V SiC Schottky diodes, rated at 4, 6, 8, 10 or 12A. Called the DSCxxA065LP series, they come in a 8 x 8 x 1mm T-DFN8080-4 package. The company claims a leading Qc x Vf figure-of-merit, but does not include the numbers in its data sheets, so Electronics Weekly unleashed its calculator to find typical 25°C ...