Electronics Weekly
It is a 60V p-channel mosfet, and joins four n-channel space devices for 60V or 150V use in either TO247 or D2PAK plastic packaging.
The p-channel, called BUP06CP038F-01, comes in DPAK (TO252) form and is rated at 35A continuous, 46MeV∙cm2/mg LET single event effects (SEE), and a total ionising dose (TID) of 30 to 50krad (Si).
Its qualification for space applications is “according to the relevant tests of AEC-Q101”, according to the company, and “package tests such as out-gas and salt atmosphere tests are included as part of the qualification”.
Junction to case thermal resistance is 1.2K/Wm, and operation is over -55 to +175°C.
The 35A max is at 25°C, which drops to 28A at 100°C. Peaks up to 140A are possible.
At 35A 25°C, and with 10V on the gate, max on-resistance is 38mΩ – close to the 32mΩ typical value.
Find the on Infineon’s BUP06CP038F-01 web page
