InGaAs photo diodes for 0.9 to 2.6μm

Hamamatsu has launched a family of InGaAs photodiodes with sensitivity across 0.9 to 2.6μm and with a choice of sensitive areas.

Hamamatsu g1719x InGaAs photo diodes

“The G1719x series are near-infrared sensors offering high sensitivity and low dark current, comparable to conventional metal packages, while featuring a surface-mounted ceramic design compatible with lead-free re-flow soldering,” according to the company. They are “tailored to meet the needs of researchers and engineers across industries including gas sensing, remote temperature measurements and laser applications”.

THamamatsu g1719x InGaAs photo diodeshere are three wavelength ranges: 0.9 to 1.7μm (1.55μm peak), 0.9 to 1.9μm (1.75μm peak), 0.9 to 2.1μm (1.95μm peak) or 0.9 to 2.6μm (2.3μm peak), and three photo diode diameters*: 0.3. 0.5 or 1.0mm. All combinations are available.

Packaging is 2.9 x 2.9 x 1.2mm, with light entering perpendicular to the PCB.



Low dark current and high sensitivity are claimed, but the company is not making these figures public yet.

*the company describes these as ‘area’ not diameter. Electronics Weekly is checking which is true.

Type
G1719….
Photosensitive
diameter*
(mm)
Spectral
response
(μm)
Peak sensitivity
wavelength
(μm)
…0-003K 0.3 0.9 to 1.7 1.55
…0-005K 0.5
…0-010K 1.0
…1-003K 0.3 0.9 to 1.9 1.75
…1-005K 0.5
…1-010K 1.0
…2-003K 0.3 0.9 to 2.1 1.95
…2-005K 0.5
…2-010K 1.0
…3-003K 0.3 0.9 to 2.6 2.3
…3-005K 0.5
…3-010K 1.0

 

Steve Bush

Steve Bush is the long-standing technology editor for Electronics Weekly, covering electronics developments for more than 25 years. He has a particular interest in the Power and Embedded areas of the industry. He also writes for the Engineer In Wonderland blog, covering 3D printing, CNC machines and miscellaneous other engineering matters.

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