Electronics Weekly
Agilent Technologies has added to its range of silicon RF amplifiers designed for IF and buffer stages in DBS low-noise block downconverters, GSM/CDMA radio cards and microwave links, which feature single-supply 3V operation.
The SOT-363 packaged ABA-31563, ABA-32563 and ABA-54563 offer noise figures with linear output power levels ranging from +2.2dBm to +16.1dBm, and third-order output intercept points from +13.1dBm to +27.8dBm.
Like the previous devices, the amplifiers feature unconditional stability combined with input and output VSWRs of less than 1.5, and internal input and output 50ohm matching.
The 3V ABA-31563 provides an operating frequency range of DC to 3.5GHz. At 2GHz, it offers a small-signal gain of 21.5dB, linear output power (P1dB) of +2.2dBm, +13.1dBm output third-order intercept point (OIP3) and 3.8 dB noise figure.
The 3V ABA-32563 is specified for operation from DC to 2.5GHz. At 2GHz, it features 19dB gain, +8.4dBm P1dB, +19.5dBm OIP3 and 3.5dB NF.
The 5V ABA-54563 is specified for operation from DC to 3GHz. At 2GHz, it features 23.1dB gain, +16.1dBm P1dB, +27.8dBm OIP3 and 4.4dB NF.
The amplifiers are fabricated using the firm’s HP-25 silicon bipolar process with 25GHz fT and 30GHz fmax. This technology uses a double-diffused single polysilicon process with self-aligned submicron emitter geometry and is capable of simultaneous high fT and high NPN breakdown (25GHz fT at 6V BVceo).
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