1.2kV 80mΩ SiC mosfet comes in TO247-4

Dubbed DMWS120H100SM4, its packages transfers heat at 0.6°C/W “making it well-suited for applications running in harsh environments”, according to the company,

Rds(on) is typically 80mΩ (Vg=15V, 100mΩmax) and gate charge is typically 52nC (-4/+15Vg, 800Vd, 20Ad).

Its 37A maximum capacity is at 25°C, which drops to 23.5A at 100°C.

Packaging is TO247-4, allowing the fourth (source-connected) pin to be used to improve gate drive fidelity.

The DMWS120H100SM4 product page can be found here