Power Supplies

Infineon is aiming at automotive power control with a 5 x 7mm top-side cooled surface-mount package, pitching it against the 5 x 6mm bottom-cooled SSO8. The package, SSO10T, has a 10μm gap instead of a thermal pad on the PCB side, and around 95% of heat will leave through the top, according to the company, typically to the ECU housing ...

Weidmuller has announced a series of battery connectors and battery connector cable assemblies. They are “engineered to handle high currents” and “designed to withstand harsh environmental conditions”, according to the company. Connectors for cables from 16 to 95mm2 are available, with contacts made from copper alloy finished with silver and, approved according to UL 4128. Predicted mechanical connection life, without ...

Navitas Semiconductor has demonstrated a 4.5kW 54V server power supply using both GaN and SiC transistors. Claimed density is “over 130W/in3 with efficiency over 97%. The architecture replaces the standard four diode bridge (and boost power factor correction) at the front end with an active all-transistor circuit – a multi-phase totem pole power factor corrector. While often called ‘bridgeless’ because ...

Infineon Technologies has put 2kV silicon carbide mosfet die in its four lead TO-247PLUS-4-HCC package, aiming them at systems with dc links up to 1.5kV. “It is the first discrete silicon carbide device with a breakdown voltage of 2,000V on the market, with a creepage distance of 14mm and clearance distance of 5.4mm,” according to the company. “The devices are ...

Long Beach, CA: Rohm Semiconductor rose above the industry’s GaN vs SiC debate with announcements from both camps. The first was a design win for its 650V GaN device, the EcoGaN, for the 45W output USB-C charger C4 Duo (pictured) by Innergie (a Delta brand). The company said that its GaN device contributes to efficiency in power supply and increased ...

At APEC 2024, Power Integrations‘ chairman and CEO, Balu Balakrishnan, “declared war on DC-DC post regulators”, as the company introduced the GaN-based InnoMux-2 switcher IC family. The company said that the new ICs are an example of its value and energy focus because it combines AC-DC and DC-DC stages into a single power converter, resulting in a reduction in power ...

EPC is claiming “the lowest on-resistance GaN FET on the market” for its 1mΩ 100V EPC2361, which comes in a 3 x 5mm QFN package with top and bottom cooling. 1mΩ is at 50A 25°C with 5V on the gate, and rises to ~1.8mΩ at the max operating temperature of 150°C (minimum is -40°C). The preliminary data sheet has no ...

Analog Devices has created a stand-alone 100V half-bridge driver for GaN power hemts “with a propagation delay of 10ns and delay matching of 1.5ns between the top and bottom channels, making it suitable for high-frequency dc-dc converters, motor drivers and class-D audio amplifiers”, according to the company. Called LT8418, this IC looks very much like the output stage used within ...

Advanced Energy Industries is showing its NP08 4kW ac-dc power supply at APEC in Long Beach this week. The first member of its NeoPower (NP) family of configurable multi-output supplies, it has eight output slots for configuration and 18W/inch3 claimed density for ~283 x 203 x 64mm chassis. Input is single-phase 90 – 132Vac and 180 – 264Vac. “NP08 also ...

Microchip is aiming at motor control by combining a triple half-bridge mosfet gate driver, a 100MHz processor and CAN FD transceivers in the same IC. Other members of the family offer LIN transceivers instead of CAN, or a CAN interface without transceivers, or no CAN or LIN, and a base model has a 70MHz processor. Some have SENT interfaces for ...