1,200V SiC Schottkys in TO-247

Toshiba has added ten 1.2kV silicon carbide Schottky diodes to its collection, half in TO-247-2L packaging, and half in TO-247, claiming a forward voltage of typically 1.27V.

Toshiba SiC TO247 Schottkys

A quick dip in the data sheets reveals that the TRS20H120H drops 1.27V (1.45V max) at 25°C and its maximum current of 20A. This typically rises to 1.64V at 150°C.

This is one of the two-lead TO-247-2L parts, which has a total capacitive charge of 109nC (800V 1MHz) and typically leaks 2μA with 1.2kV across it at 25°C (130μA max, and 20μA typ at 150°C).


Add a ‘B’ suffix for the three-leaded TO-247 version.


TRS40N120H another of the series (TRSxxx120Hx), that the company is drawing attention to, which can handle 40A continuously and peak surges of 270A.

All of them can work with their cases up to +175°C.

These are merged PiN-Schottky barrier diodes, which reduces losses at high currents compared with simple Schottky diodes.

Applications are foreseen in industrial equipment including photovoltaic inverters, electric vehicle charging stations and switching power supplies.

Find the TRS20H120H 20A SiC schottky diode on this web page

Toshiba has a good backgrounder document on many forms for diode, including merged Schottky-PiN diodes, here as well as one on diode power loss and one on absolute maximum rating

 

Steve Bush

Steve Bush is the long-standing technology editor for Electronics Weekly, covering electronics developments for more than 25 years. He has a particular interest in the Power and Embedded areas of the industry. He also writes for the Engineer In Wonderland blog, covering 3D printing, CNC machines and miscellaneous other engineering matters.

Leave a Reply

Your email address will not be published. Required fields are marked *

*