Electronics Weekly
The EPC2152 is a single-chip driver plus eGaN fet half-bridge power stage using proprietary GaN technology. 
Input logic interface, level shifting, bootstrap charging and gate drive buffer circuits along with eGaN output FETs configured as a half-bridge are integrated within a monolithic chip. This results in a chip-scale LGA form factor device that measures only 3.9×2.6×0.63 mm.
When operated in a 48V to 12V buck converter at 1MHz switching frequency, the EPC2152 Epower Stage achieves a peak efficiency of 96%.
The EPC2152 is the first offering in a planned family of integrated power stages available in chip scale package as well as multi-chip quad flat modules. The company says it intends to fill out the family with products capable of operating at frequencies up to 3-5MHz range as well as currents from 15-30A per power stage.
The EPC90120 development board is a 80V maximum device voltage, 12.5A maximum output current, half bridge featuring the EPC2152 integrated Epower stage. This 50.8×50.8 mm board is designed for switching performance and contains the necessary components for evaluation of the EPC2152 integrated Epower stage.
The devices are available for immediate delivery from Digi-Key
“Discrete power transistors are entering their final chapter. Integrated GaN-on-Silicon offers higher performance in a smaller footprint with significantly reduced engineering required,” said Alex Lidow, CEO and co-founder of EPC.
“This new family of integrated power stages is the next significant stage in the evolution of GaN power conversion, from integrating discrete devices to more complex solutions that offer in-circuit performance beyond the capabilities of silicon solutions and enhance the ease of design for power systems engineers”
