Electronics Weekly
The ePower chipset is capable of a maximum withstand voltage of 100V, delivering up to 65A load current and is capable of switching speeds greater than 1MHz.
The EPC23101 IC uses EPC’s proprietary GaN IC technology and includes integrated 3.3mΩ RDS(on) high side FET with gate driver, input logic interface, level shifting, bootstrap charging, gate drive buffer circuits and gate driver output to drive external low side eGaN FET
The EPC2302 eGaN FET offers RDS(on) of just 1.8mΩ, with small QG, QGD, and QOSS parameters for low conduction and switching losses, says the company.
Both devices feature a thermally enhanced QFN package with exposed top with optimised pinout between the two devices. The combined chipset footprint, is 7mm x 5mm.
When operated in a 48V – 12V buck converter, the EPC23101 – EPC2302 chipset delivers 96% efficiency at 1MHz and 97% efficiency at 500kHz switching and can deliver 65A with less than 50°C temperature rise.
Integrated devices are easier to design, layout and assemble with reduced design engineering required, points out the company and save space on the PCB.
The ePower Chipset translates the PWM command signals to high voltage and high current waveforms capable of driving real world loads for lighter in weight, precise battery-operated BLDC motor drives for e-motion, robotic arms and drones. They can also be used for industrial and consumer applications, such as 48V input DC-DC converters for data centre, datacom, artificial intelligence or solar MPPT.
The EPC90142 development board is a 100V maximum device voltage, 65A maximum output current, half bridge featuring the EPC23101 integrated ePower FET and EPC2302 eGaN FET. The board is 2-inch x 2-inche (50.8mm x 50.8mm) and contains all critical components, says the company.
All devices and boards are available for immediate delivery from Digi-Key.
