Electronics Weekly
Micro LED arrays (1)
The LEDs are GaN/InGaN – the technology behind white LEDs – with a pitch of 10µm or less.
“Currently available microdisplays for both head-mounted and compact head-up applications suffer from fundamental technology limitations that prevent the design of very low-weight, compact and low-energy-use products,” said Ludovic Poupinet, head of Leti’s Optics and Photonics Department. “Leti’s technology overcomes these limitations and is scalable to a standard microelectronic large-scale process.”
Brightness of 1,000,000cd/m² for monochrome and 100,000cd/m² for full-colour devices is claimed for <25mm displays with 2.5 million pixels.
“This is a 100 to 1,000x improvement compared to existing self-emissive microdisplays, with very good power efficiency,” said Leti.
Micro LED arrays (2)
While not completely clear, it looks like the LED epitaxy is grown on a sapphire (or other suitable) substrate, then 3D-integrated with a CMOS active matrix on a silicon wafer.
The process was developed in collaboration with III-V Lab, run by Alcatel-Lucent and Thales.
It was announced at Display Week 2015 in San Jose.
