Stay informed with the latest gate array news at Electronics Weekly, highlighting developments in programmable logic and ASIC technologies critical to custom electronics design. Whether for consumer devices, automotive systems, or industrial applications, gate arrays enable optimized performance and flexibility. Our news captures innovations, new product launches, and global market dynamics, offering valuable insights for engineers looking to enhance system architecture with advanced gate array solutions.
Toshiba has introduced an opto-isolated SiC gate driver, that includes an active Miller clamp to tame self-turn-on behaviour in the driven device. Named TLP5814H, it is a “gate driver photocoupler suitable for driving silicon carbide mosfets in industrial equipment like inverters, uninterruptible power supplies and photovoltaic inverters which experience harsh thermal environments”, according to the company. “The Miller clamp circuit ...
TDK has shrunk its 500V gate drive transformers to 11 x 13mm and 11mm high, smaller than its existing E10EM series. The new parts, called the EP9 series and aimed at both IGBTs and mosfets, are built on a MnZn ferrite core with surface-mount L-pin construction. Creepage and clearance is 5mm, peak withstanding is 2.5kVac 50Hz, and coupling capacitance is ...
A question arose at Electronics Weekly after Rohm introduced an 8pad isolated for GaN transistors. In the BM6GD11BFJ-LB data sheet is a half-bridge application circuit (figure 28, right, slightly modified for clarity). It is a classic bootstrapped circuit (explained far below) for driving silicon mosfets, but the gates of GaN hemts are far fussier that Si mosfets: a little below ...
Distributor Rutronik is stocking an isolated single-channel gate driver for GaN hemts that comes in a 4.9 x 6 x 1.65mm SOP-JW8 package. Made by Rohm and called BM6GD11BFJ-LB, they have “an isolation voltage of up to 2,500Vrms, a minimum input-output latency of 60ns and a minimum input pulse width of 65ns”, said Rutronik. “Under-voltage lock-out is integrated into the ...
For the gate drivers of high-power IGBTs, mosfets, SiC mosfets and GaN hemts, Infineon has introduced an isolated power supply IC that can generate asymmetric output voltage rails. Each member of the 2EP1xxR family, as it will be known, has a full bridge of mosfets at its output for driving both ends of a transformer primary, whose secondary can be ...
Vishay has stretched an SO-6 package to accommodate 1kV operation from opto-based mosfet and IGBT gate drivers. The body is ~7mm from end to end and creepage is 8mm. Clearance is 7mm for the ‘option 9’ package which has conventionally bent legs, or 8mm for the ‘option 8’ package which has widely-splayed legs (see image). Peak working voltage is 1.14kV ...
EPC Space has created two surface-mount 40V radiation-specified GaN hemts for space use. EPC7001BSH is a 50A (120A pulse) 11mΩ transistor in 5.7 x 3.9mm packaging EPC7002ASH is a 15A (40A pulse) 28mΩ transistor in 3.4 x 3.4mm packaging “Both devices have a total dose radiation rating greater than 1,000kRad(Si) and SEE immunity for LET of 83.7MeV/mg/cm2 with Vds up ...
Infineon is aiming at 24 and 48V ancillary motors in vehicles, with a three-phase bridge gate driver with advanced protection features. “The gate driver IC offers functional safety according to ISO 26262 ASIL B,” according to Infineon. “It has a range of protection functions such as timeout-watchdog, drain-source monitoring, over-voltage, under-voltage, cross-current and over-temperature protection, as well as off-state diagnostics.” ...
Altera intends to launch 20nm products next year with volume production starting in 2014, Bradley Howe, senior vice president for R&D at Altera, told a meeting in London this morning.
Xilinx has announced that Wim Roelandts intends to retire from his posts as president and CEO of the company
Electronics Weekly
