Rohm has introduced six miniature surface-mount top-view near-infrared LEDs. There are three packages: one measures 1 x 0.6mm and is only 0.2mm thick including a layer of encapsulation. Emission is 2.8mW/sr at 30mA. The other two measure 1.6 x 0.8mm and have either a lensed top (1.24mm tall, 5mW/sr at 20mA), or a flat top (1.06mm tall, 1.9mW/sr at 20mA) ...
ROHM and TSMC have entered a strategic partnership on development and volume production of GaN power devices for electric vehicle applications. The partnership will integrate ROHM’s device development technology with TSMC’s GaN-on-silicon process technology to meet the growing demand for superior high-voltage and high-frequency properties over silicon for power devices. GaN power devices are currently used in consumer and industrial ...
The winner of the latest UK-APAC Tech Growth programme, Heronic Technologies, will collaborate with Rohm Semiconductor to explore how Rohm can develop its own power semiconductor materials for emerging technologies. Heronic specialises in AI accelerator architectures. Its proprietary technology customises chips for optimum efficiency and performance “beyond the capabilities of generic architectures” for specific AI applications. The Tech Growth programme ...
ROHM has developed an ultra-compact 1.8V – 5V, rail-to-rail CMOS op amp – the TLR377GYZ, optimised for amplifying signals from sensors such as temperature, pressure, flow rate, used in smartphones, small IoT devices, and similar applications. The size of smartphones and IoT devices continues to decrease – requiring smaller components. To accurately amplify small signals as needed in high precision ...
Long Beach, CA: Rohm Semiconductor rose above the industry’s GaN vs SiC debate with announcements from both camps. The first was a design win for its 650V GaN device, the EcoGaN, for the 45W output USB-C charger C4 Duo (pictured) by Innergie (a Delta brand). The company said that its GaN device contributes to efficiency in power supply and increased ...
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