4 quadrant NIR photo diode leaks only 5nA

ElFys has launched circular four-quadrant near-infra-red detector with a 14mm diameter active area, leading to 38.5mm2 of sensing surface in each quarter.

ElFys 4 quadrant IR diode

Named QPD-385-Y, the sensor’s dark current is typically 5nA per element (140V bias, 30nA max) with a temperature coefficient of 1.11x/°C.

Illuminated with 1.064μm wavelength light, at the same 140V bias typical sensitivity is 640mA/W (500mA/W minimum).


Capacitance is typically 22pF per element (16pF min) and rise-time is 15ns.


“The detector leverages the company’s proprietary ‘black silicon’ technology,” according to the company. “ElFys has created a detector that combines high responsivity, low dark current and fast response times with precise positional information.”

Physically, there is a 70μm gap between adjacent segments – cross-talk is typically 2% with a 1kΩ lead.

The active surface is 5mm from the mounting surface, and 200μm from the window.

If heating is required, model QPD-385-YH has an integrated 40Ω heater and 1kΩ temperature sensor.

Both heated and unheated versions come in a top-hat can whose barrel is 25mm in diameter.

Operation is across -40 to +85°C and maximums are 250V (~2μA reverse leakage) and 10mA.

Applications are foreseen tracking and aligning 1,064nm YAG lasers, laser-guided munitions, free-space optical communication beam pointing, and auto-collimation angular measurement.

ElFys provides this link to download a data sheet.

Steve Bush

Steve Bush is the long-standing technology editor for Electronics Weekly, covering electronics developments for more than 25 years. He has a particular interest in the Power and Embedded areas of the industry. He also writes for the Engineer In Wonderland blog, covering 3D printing, CNC machines and miscellaneous other engineering matters.

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