SiC diode with breakdown voltage of 2000V in TO-247-2 package

Infineon is shipping the CoolSiC Schottky diode 2000 V G5 product family – its first discrete SiC diode with a breakdown voltage of 2000V – in a  TO-247-2 package.

The product family fits applications with DC link voltages up to 1500 V DC, making it suitable for solar and EV chargers.

An evaluation board for the 2000 V CoolSiC product family is offered, as well as a matching gate driver portfolio.


SiC diode with breakdown voltage of 2000V in TO-247-2 package

The CoolSiC Schottky diode 2000 V G5 in the TO-247-2 package is available with current ratings ranging from 10 to 80 A.


It allows developers to achieve higher power levels in their applications while reducing the component count by half compared to 1200 V solutions.

This simplifies the overall design and facilitates a seamless transition from multi-level to two-level topologies.

The Schottky diode in the TO-247-2 package incorporates .XT interconnection technology, which reduces thermal resistance and impedance, thereby enhancing heat management.

Humidity robustness has been validated through HV-H3TRB reliability testing. The diodes exhibit neither reverse recovery nor forward recovery, and feature a low forward voltage, ensuring improved system performance.

The 2000 V diode family is a match for the CoolSiC MOSFETs 2000 V in the TO-247Plus-4 HCC package.

The TO-247-2 package, the CoolSiC Schottky Diode 2000 V is also available in the TO-247PLUS-4 HCC package.

More at www.infineon.com/diodes-2000v-g5.

David Manners

David Manners

David Manners has more than forty-years experience writing about the electronics industry, its major trends and leading players. As well as writing business, components and research news, he is the author of the site's most popular blog, Mannerisms. This features series of posts such as Fables, Markets, Shenanigans, and Memory Lanes, across a wide range of topics.

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