Toshiba’s latest range of NAND flash memory chips have a serial interface. The advantage of the serial interface is that the devices can be controlled with just 6-pins, and this means they can be used as low-pin count SLC NAND flash memory. SLC NAND flash memory is now being used as a higher capacity alternative to NOR flash memory in some embedded ...
Memory
Micron legacy SDR/DDR modules live on at ATP
Micron Technology’s legacy DRAM modules (SDR/DDR) will be manufactured by ATP following a license agreement between the companies. Micron published EOL notices for these SDR and DDR DRAM modules in January 2015 with a Last Time Buy (LTB) in July 2015 and a Last Time Ship (LTS) in January 2016. Taiwan-based ATP will continue to manufacture these DRAM modules specifically for the ...
Atmel EEPROM needs just two pins, one wire
Atmel has designed a self-powered EEPROM which requires only two-pins—a data pin and ground pin – for operation. As the devices are self-powered, there is no need for a power source or Vcc pin, with a parasitic power scheme over the data pin. These single-wire EEPROMs have a specified power standby of 700nA, 200µA for write current, and 80µA for ...
SSD backs up legacy semiconductor manufacturing gear
Solid State Disks has launched an Ethernet-based back-up and restore capability for its family of Compact Flash (CF) SCSI-Flash solid-state drives for storage systems on legacy semiconductor manufacturing equipment.
UK firm claims highest density MRAM device
UK-based e2v claims to have created the highest density MRAM device in the industry. The firm uses a stacked-package to create a 32Mbit MRAM-based product in a 54-pin TSOP. The EV5A16B integrates two 16Mbit MRAM devices from Everspin Technologies. According to e2v, the attraction of MRAM technology is that it can offer SRAM-like 35ns read/write timing but with data retention and ...
Micron introduces terabyte SSD using 20nm flash
Micron Technology has announced a terabyte solid state drive (SSD) which it claims will have quick boot-up and will draw as little as 0.15W during normal operation. The NAND flash drive has a speed of up to 95,000 input/output operations per second. The drive’s sequential speeds reach up to 550Mbyte/s for reads and 500Mbyte/s writes, which maxes out the capabilities of the SATA 6 Gb/s ...
Vertical NAND avoids scaling issues
The pressure to find an alternative mainstream non-volatile memory to NAND is now much less urgent following the development of vertical NAND structures which stack memory cells on top of eachother.
Toshiba flash memory has 160MB/s read speed
Toshiba will launch a range of CompactFlash memory cards for the DSLR camera market in spring 2013
Adaptec low-profile MD2 form factor Unified Serial RAID adapters
Based on PMC-Sierra's SRC 8x6G RoC and ARC RAID stack, Adaptec Series 6 controllers are family of low-profile MD2 form factor Unified Serial RAID adapters offer
STMicroelectronics puts 512kbit EEPROM in 2x3mm package
The devices’ built-in byte-mode erasing capability allows easy parameter update; and 128-byte page write, together with 5ms write time, results in rapid program