Electronics Weekly
Called FET-Jet Calculator, no registration is needed, although you do have to click a minimal user agreement.
This is not the sort of tool that tells you which transistors to use for a certain output efficiency, but rather a suck-it-and-see tool that allows different transistors to be dropped into one of four topologies: boost PFC, totem-pole PFC, three-level Vienna rectifier or two-level voltage-source inverter, to see what losses will occur where – the tool automatically calculates switch current, efficiency and losses, catalogued by conduction, turn-on and turn-off contributions and junction temperatures amongst other parameters.
In addition to picking the transistors and Schottkys from sortable table, and deciding how many to connect in parallel, other adjustable parameters include input voltage, converter power output, switching frequency, operating temperature and heatsink rating.
Warnings occur if a selection is not appropriate, such as when voltage rating is insufficient for the conditions and topology chosen.
“Selecting the right device in the right power topology shouldn’t be a barrier to power designers considering the switch to SiC,” said UnitedSiC v-p engineering Anup Bhalla. ”This is why we built the FET-Jet Calculator. For engineers working with SiC for the first time, or those looking for the best SiC device to fit evolving designs, the calculator is a quick and easy way to evaluate UnitedSiC fets in a variety of topologies.”
The company makes SiC devices in TO-220, TO-247, TO-247/4L and DFN8x8 packages with ratings spanning 650V to 1.7kV and 7 to 120A (2 to 50A for diodes). It recently launched Gen 4 750V devices.
