Power

Innoscience has released an improved bi-directional GaN transistor that can replace back-to-back silicon mosfets in high-side switching. Called INN040W048A, it is a 40V bi-directional GaN-on-silicon HEMT with on-state resistance as low as 4.8mΩ, which comes in a 2.1 x 2.1mm WLCSP package. It follows on from the 40V 15A 7.8mΩmax (5.5mΩ typ) 2 x 2mm INN40W08, which was never generally ...

Cosel has introduced three DIN rail mount ac-dc power supplies for industrial applications, in three power levels: 30W, 60W or 90W. Intended for rack-mount use, all operate over 85 to 264Vac, and ambients of -20 to +70°C with derating caveats depending on local ventilation. The 30W model, WDA30F, is available in four different output voltage variants: 5, 12, 24 or ...

TT Electronics today announced its TFHP series thin film, high power chip resistors which combines high power and high precision in a single resistor, capitalising on aluminium nitride (AIN) ceramic substrate with nearly six times the conductivity of alumina. This high power density component saves printed circuit board (PCB) area and can boost reliability by restricting the temperature rise in ...

Kingston University is testing a hydroelectric turbine prototype from a pontoon in the Thames. Developed by Hales Marine Energy near Eastbourne, the aim is to create a turbine that can be used in the sea as well as rivers, sitting on a submergible tank that normally rests on the sea bed, but can be floated to the surface for maintenance. ...

Kyocera AVX has introduced a series of pouch-style supercapacitors for decreasing current surges in batteries. Called the SCP Series and branded PrizmaCap, they “can be used on their own as system power backup devices, replacing batteries in some cases, or they can be used in conjunction with primary or secondary batteries”, according to distributor Anglia, which is stocking the parts. ...

Toshiba is claiming better improved on-resistance and gate charge for its third generation of industrial 650V enhancement-mode silicon carbide mosfets. The “third generation SiC process optimises the cell structures used in second-generation devices,” according to the company. “As a result, the product of Rds(on) and Qg, that represents both static and dynamic losses, has improved by about 80%”. In common ...

Power module companies Semikron and Danfoss subsidiary Danfoss Silicon Power have completed their merger to form Semikron-Danfossmerge, majority owned by Danfoss. Of the two family-owned companies, Semikron is bringing in 3,000 staff from 24 subsidiaries worldwide, and there will be 500 from Danfoss Silicon Power. Where did Danfoss get resources to buy the significantly larger company? “We can’t go into ...

 Bombora Wave Power has completed indoor water tank testing of a floating energy platform that combines support for a wind turbine with wave energy harvesting. Evaluated at the University of Edinburgh’s FloWave facility, “the integrated platform was tested under a wide range of conditions, including extreme waves”, said Bombora head of loads and modelling Peter Arnold. “Analysis is currently underway, where ...

Californian GaN power IC maker Navitas Semiconductor has bought Virginia silicon carbide company GeneSiC Semiconductor. “Navitas GaN ICs are optimised for 400V electric vehicle systems, and GeneSiC technology is ideal for 800V electric vehicle systems,” according to Navitas. “Navitas GaN ICs serve residential solar, while GeneSiC has immediate revenue in higher power commercial solar and energy storage customers. GeneSiC high-voltage ...

EPC has introduced a 100 V, 35 A IC designed for 48 V DC-DC conversion used in high-density computing applications and in 48 V BLDC motor drives for e-mobility, robotics, and drones. The EPC23102 eGaN IC is capable of a maximum withstand voltage of 100 V, delivering up to 35 A load current, while capable of switching speeds greater than ...