IGBT

STMicroelectronics is aiming at domestic induction hobs and microwaves with a 1.6kV IGBT in a long lead TO-247 package. “STGWA30IH160DF2 IGBT combines high thermal performance with efficiency in soft-switching topologies and easy paralleling,” claimed the company. Nominal current rating is 30A (120A pulsed), and the device works with its junction up to 175°C. Thermal resistance is 0.36°C/W junction-to-case, and 0.81°C/W for ...

Littelfuse has introduced a 200V half-bridge mosfet and IGBT driver with integrated cross-conduction protection logic, said the company. IXD2012NTR, as it will be known, is designed to drive n-channel mosfet gates that need between 10 and 20V, and can supply a minimum of 1.4A pull-up and 1.8A pull-down (both into short-circuits) from either output. Typical figures are 1.9 and 2.3A ...

Cambridge GaN Devices has patented a technique for lowering losses in 100kW+ IGBT-based vehicle traction drives, at lower cost than all-silicon-carbide inverters, it said. It involves connecting GaN hemts in parallel with large silicon IGBTs, and has been branded ‘Combo ICeGaN ‘. “Today, inverters for EV powertrains either use IGBTs which are low cost but inefficient at light load conditions, ...

TDK has shrunk its 500V gate drive transformers to 11 x 13mm and 11mm high, smaller than its existing E10EM series. The new parts, called the EP9 series and aimed at both IGBTs and mosfets, are built on a MnZn ferrite core with surface-mount L-pin construction. Creepage and clearance is 5mm, peak withstanding is 2.5kVac 50Hz, and coupling capacitance is ...

Vishay has stretched an SO-6 package to accommodate 1kV operation from opto-based mosfet and IGBT gate drivers. The body is ~7mm from end to end and creepage is 8mm. Clearance is 7mm for the ‘option 9’ package which has conventionally bent legs, or 8mm for the ‘option 8’ package which has widely-splayed legs (see image). Peak working voltage is 1.14kV ...

A $3.5 billion foundry contract, the road ahead for Intel, AMD launching auto-qualified FPGAs, Intel securing a customer for its 18A process, and alternatives for IGBTs...

BEC Distribution has announced the availability of high-quality Alternatives for STMicroelectronics and onsemi IGBT Transistors. They are available on a 4-6 weeks lead time with free samples provided on request. BEC’s Insulated Gate Bipolar Transistors (IGBTs) provide maximum reliability combined with high-voltage, high-current characteristics. They feature a low saturation voltage and a high current capability combined with controlled junction temperatures ...

Onsemi has announced a 112 x 62mm power module for flying capacitor boost converters up to 1kV. It combines 1kV silicon IGBTs and 1.2kV silicon carbide diodes in the company’s F5BP package. Called NXH500B100H7F5SHG, it can handle continuous collector currents up to 210A (630A pulsed) (Tj = 175°C). Abs max power dissipation is 305W. To reducing stray inductance and thermal ...

Toshiba is aiming at air conditioners, air purifiers and pumps with an IGBT-based brush-less dc motor driver, suitable for sine-wave generation, in a ~13 x 33mm through-hole HDIP30 package. TPD4165K, as it will be know, can handle a maximum output of 3A, compared with 2A for the company’s earlier TPD4163K or TPD4164K. Absolute maximum input voltage has been raised to ...

Shanghai-based WeEn Semiconductors unveiled 650V and 1,200V IGBTs with fast recovery anti-parallel diodes at PCIM in Nuremberg. “Based on fine trench gate field-stop technology, the IGBTs provide a more uniform electric field within the chip, support higher breakdown voltages and offer improved dynamic control,” according to the company. “A positive temperature coefficient simplifies parallel operation.” Ratings are 650V 75A, 1.2kV ...