Rohm

Rohm has designed a mosfet for high-current 48V hotswap controllers in data centres. RY7P250BM is a 100V device nominally rated at 300A and comes in an 8 x 8mm DFN8080 package. “In hot-swap circuits used to safely replace modules while servers remain powered on, mosfets are required that offer both wide safe operating area and low on-resistance to protect against ...

Rohm has created three n-channel power mosfets in 5 x 6mm DFN packaging. RS7E200BG is a 30V mosfet optimised for both secondary-side ac-dc conversion and hot-swap controllers in 12V enterprise server power supplies. RS7N200BH is an 80V mosfet optimised for secondary ac-dc conversion in 48V server power supplies, as is RS7N160BH. “The DFN5060-8S package increases the internal die size area ...

Rohm has formerly announced the TOLL-packaged 650V GaN hemts that Electronics Weekly featured in a GaN driving trechnology article last week. To get the devices, called GNP2070TD-Z, into the increasingly popular ~12 x 10 x 2.4mm TOLL (TO-lead-less) package, which is finding use in high power industrial and automotive equipment, Rohm chose to out-source the back-end to ATX Semiconductor (Weihai) ...

A question arose at Electronics Weekly after Rohm introduced an 8pad isolated for GaN transistors. In the BM6GD11BFJ-LB data sheet is a half-bridge application circuit (figure 28, right, slightly modified for clarity). It is a classic bootstrapped circuit (explained far below) for driving silicon mosfets, but the gates of GaN hemts are far fussier that Si mosfets: a little below ...

Rohm is sampling 320GHz resonant tunneling transmit and receive diodes in 4 x 4.3mm PLCC packaging, borrowed from LED production. “Terahertz waves are anticipated to be applied to non-destructive testing, imaging and sensing in the medical and healthcare sectors, as well as potentially fast communication technologies,” according to the company. The die within measure 500 x 500μm and are capable ...

Rohm has released a line of 16bit microcontrollers for power supplies with hybrid analogue-digital control loops, plus an evaluation board with software as a design stepping stone. “In recent years medium power power supplies are required to provide a level of reliability and precise control that is difficult to meet with analogue-only configurations,” said Rohm. “On the other hand, while ...

A new selection of materials has allowed Rohm to add 5W rated current sensing resistors to its 2512 sized (6432 metric) PMR100 series of metal plate shunts, formerly rated at either 2 or 3W only. They are available in 0.5, 1 and 1.5mΩ. “Adopting a proprietary trimless structure suppresses the rise in temperature caused by localised current concentration. This allows ...

Rohm has created a proprietary trench MOS structure for 100V Schottky diodes to improve the trade-off between forward voltage and reverse leakage. It has been used to create the YQ series of rectifier diodes, available in surface-mount packages from 0.5 x 1mm to TO-263 with ratings between 1A and 30A. Most of them are available with automotive qualification. Leakage is ...

NGK Insulators has teamed up with Rohm to produce a complete energy storage evaluation kit for IoT devices including shelf-edge labels. Called REFLVBMS001-EVK-001, it measures 56 x 32 x 1.6mm and the components, including the battery, stand a maximum of 1mm above the PCB. It can accept power at 4.5 to 5.5V, and outputs up to 500mA at one of ...

Rohm is aiming at industrial and consumer applications with a ‘zero-drift’ operational amplifier which scores 9µV and 50nV/°C for its input offset – both maximum figures, which are typically 1µV and 15nV/°C. A first for the company, LMR1002F-LB, as it will be called, has a chopper architecture. Input current is typically 150pA (25°C) with 10pA offset. Both inputs and output are ...