Memory

DRAMeXchange expects flash-based solid state discs (SSDs) to be a big growth area next year on the back of the migration to 2xnm processes.

Slowing demand for DRAM from the PC industry and softening prices have pushed Nanya into a Q3 loss of US$73m and Inotera – the Micron-Nanya DRAM jv – into a loss of $76m.

Available from Rutronik, the X-200 series from Swissbit are industrial 2.5in. solid-state drives for embedded computers. They are available now in capacities from 4 to 64Gbyte, with...

Samsung has started production of 3bit/cell, 8Gbyte NAND flash using a "20nm-class" process. "By now entering into full production of these devices, we...

Sales of tablets and smartphones will keep NAND flash demand strong, but slowing sales of PCs could see DRAM in over-supply by Q1 2011, says Samsung, the No.1 manufacturer of both NAND flash and DRAM.

Elpida and Spansion have produced prototype 4Gbit trapped-charge flash memories made using the Spansion Mirrorbit technology. Sample chips are scheduled for Q4 and mass production for Q1 2011.

Hynix said today that it will develop and manufacture memristors with HP. The products will be called ReRAMs (Resistive Random Access Memory).

Privatran, a Texas start-up, is using technology developed at Rice University in Texas to develop memories using 5nm nanowires, according to Nano Letters.

Intel and Micron, via their joint venture IM Flash Technologies, say they have shipped to ‘select customers’ a 64Gbit (8GB) NAND flash chip which uses three-bit-per-cell (3bpc) technology on a 25nm process, and they say they will be in full production by the end of the year.

For embedded systems that have to forget, Toshiba has announced self-erasing technology for its 'self-encrypting drive' (SED) hard drives. Called 'Wipe', applications...