Electronics Weekly
GlobalFoundaries completes its acquisition of IBM microelectronics
“We have significantly enhanced our technology development capabilities and reinforce our long-term commitment to investing in R&D for technology leadership,” says GloFo CEO Sanjay Jha.
“We have added world-class technologists and differentiated technologies, such as RF and Asic, to meet our customers’ needs.”
GloFo says the deal ‘solidifies its path to advanced process technologies at 10nm, 7nm, and beyond’.
In RF, GloFo now has world-class capabilities in both RF silicon-on-insulator (RFSOI) and SiGe technologies, which are complementary to its existing mainstream technology offerings. The company says it will continue to invest to deliver the next generation of its RFSOI roadmap and looks to capture opportunities in the automotive and home markets.
In Asics, GLoFo says it now has technology leadership in wired communications. This enables it to provide the design capabilities and IP necessary to develop high-performance customised products. The company plans to increased investments to develop additional Aic products in storage, printers and networking. The most recent Asic family, announced in January and built on GloFo’s 14nm-LPP technology, has been well accepted in the marketplace.
Global Foundries CEO Sanjay Jha
GloFo increases its manufacturing scale with fabs in East Fishkill, NY and Essex Junction, VT.
The transaction builds on significant investments in the burgeoning Northeast Technology Corridor, which includes GloFo’s Fab 8 in Saratoga County, NY and joint R&D activities at SUNY Polytechnic Institute’s College of Nanoscale Science and Engineering in Albany, NY. The company’s presence in the northeast US now exceeds 8,000 direct employees.
The acquisition includes an exclusive commitment to supply IBM with some of the world’s most advanced semiconductor processors for the next 10 years. GloFo also gets direct access to IBM’s continued investment in world-class semiconductor research, solidifying its path to advanced process geometries at 10nm and beyond.
