Power mosfet and wafer-maker IceMos Technology has pulled-in $22m of series-E funding, including $7.5m from 57 Stars, and money from un-named “earlier stage USA investors” and a “London-based investor”, said IceMos Headquartered in Arizona, IceMos has manufacturing in Northern Ireland, research in Arizona and a design center in Tokyo. Its wafer products include active layers attached to handle wafers using ...
Superjuction
10 x 12mm 650V mosfet hits 3.74ΩnC and 8ΩpF
Vishay is claiming industry’s lowest Rds(on).Qg and Rds(on).Co(er) figures-of-merit for its latest 650V super-junction mosfet. The typical figures are 3.74ΩnC and 8ΩpF respectively. SiHK050N65E is an n-channel device aimed at power factor correction and subsequent dc-dc converter blocks up to 6kW. Typical on-resistance is 48mΩ (25°C, 10Vgs) and gate charge can be 78nC (16A, 520V, 10Vgs). “The device addresses 200 ...
600V 24mΩ super-junction mosfet in TO-247
Toshiba has announced a 600V super-junction mosfet with a maximum on-resistance of 24mΩ in a TO-247 package (20mΩ typ). Typical gate-drain charge is 37nC (400Vd, 10Vg, 80A) and total gate charge (gate-source + gate-drain) is 140nC. Reverse recovery for the intrinsic diode is 8.5µC and 425ns, both at 400V, 40A, 100A/µs and Vg=0 . “TK024N60Z1 uses the DTMOSVI 600V process ...
600V mosfets in SOT-223-3
Rohm has added a lineup of 600V super-junction mosfets in 6.5 x 7 x 1.66mm SOT-223-3 packaging. “In recent years, power supplies for lighting and motors for pumps are required to be smaller as devices become more sophisticated – spurring the demand for compact mosfets that are essential for switching operation,” said the company. “Generally, however, it has been difficult ...
650V super-junction mosfets
Central Semiconductor has announced five 650V n-channel super-junction mosfets in TO-220FP packaging. They are: CDMSJ2204.7-650 (4.7A) CDMSJ2207.3-650 (7.3A) CDMSJ22010-650 (10A) CDMSJ22013.8-650 (13.8A) CDMSJ22029-650 (29A) “These super-junction mosfets extend efficiency for a variety of end applications,” according to Central marketing director Tom Donofrio. Additionally, “these pair well with Central’s fast rectifiers for power factor correction”.
950V super-junction mosfets
PFD7 is a family of 950V super-junction mosfets from Infineon, that can achieve 450mΩ Rds(on) in DPAK or 60mΩ in TO247. Gate-source threshold voltage is 3±0.5V. “Due to the low threshold voltage and tolerance, linear mode operation is avoided while allowing lower driving voltage and reduced idle loss,” according to the company. “By integrating a fast body diode with low ...
650V 45mΩ 80nC super-junction mosfet in TO220
STMicroelectronics’ is aiming its M9 and DM9 n-channel super-junction multi-drain mosfets at switched-mode power supplies in applications from data centre servers and 5G infrastructure to flat-panel televisions. The first devices in these families are the 650V 45mΩ STP65N045M9 and the 600V 43mΩ STP60N043DM9. Gate charge is typically 80nC at 400V drain voltage so “these devices have the best RDS(on)max x Qg figure-of-merit currently available”, ...
600V super-junctions in DFN8x8 for servers
Alpha and Omega Semiconductor is aiming at servers with a pair of 600V super-junction mosfets in 8 x 8 x 0.9mm DFN8x8 packaging, with a Kelvin source. AONV110A60 has 110mΩ on-resistance, and AONV140A60 has 140mΩ. “Years ago, we could hardly imagine high voltage DFN8x8 devices widely adopted for server systems above 400W. People used packages such as TO-220(F) or D2PAK. Given the large ...
600V super-junction mosfets span 190 to 580mΩ
Korean transistor maker Magnachip has announced today 11 600V super-junction mosfets Describing them as ‘2.5th generation’, they are claimed to have lower switching loss and better power efficiency than its previous devices. Rds(on) varies between 190 and 580mΩ and packages include DPAK TO-220F and TO-220SF (see photo). A gate-source Zener diode is embedded to protect against electrostatic discharge and other surges. ...
Superjunction mosfets for server power supplies
Alpha and Omega Semiconductor has announced a series of super-junction power mosfets. Branded αMOS5, its first members are both 600V 250A transistors in TO-247 packaging: the 40mΩ AOK040A60, and the 42mΩ AOK042A60FD ‘fast body diode’ device – reverse recovery is typically 252ns (25A, 100A/μs, 400V) compared with 525ns in the 40mΩ part. “The optimised capacitance of the 40mΩ product will provide customers the ...