Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are integral to power management, digital circuits, and high-speed processing in electronics systems. Recent innovations in silicon carbide (SiC) and gallium nitride (GaN) MOSFETs are driving improvements in power efficiency for electric vehicles, renewable energy, and industrial automation. As energy efficiency becomes a critical design consideration, MOSFETs continue to enable the creation of low-voltage, high-frequency systems that power smart devices and advanced communications. With expanding use in 5G networks and automotive applications, MOSFETs are an essential building block of modern electronics design and energy systems.
Rohm has designed a mosfet for high-current 48V hotswap controllers in data centres. RY7P250BM is a 100V device nominally rated at 300A and comes in an 8 x 8mm DFN8080 package. “In hot-swap circuits used to safely replace modules while servers remain powered on, mosfets are required that offer both wide safe operating area and low on-resistance to protect against ...
Toshiba has introduced an opto-isolated SiC gate driver, that includes an active Miller clamp to tame self-turn-on behaviour in the driven device. Named TLP5814H, it is a “gate driver photocoupler suitable for driving silicon carbide mosfets in industrial equipment like inverters, uninterruptible power supplies and photovoltaic inverters which experience harsh thermal environments”, according to the company. “The Miller clamp circuit ...
SemiQ is aiming at solar inverters with 1,200V SiC mosfets that are avalanche tested to 800mJ, some co-packaged with silicon carbide Schottky diodes – all have intrinsic reverse diodes. There are four devices: GCMS008C120S1-E1 8.4mΩ with Schottky GCMX008C120S1-E1 8.4mΩ GCMS016C120S1-E1 16.5mΩ with Schottky GCMX016C120S1-E1 16.5mΩ The resistance figures here are the channel on-resistance. In addition, two more are avalanche tested ...
Littelfuse has introduced a 200V half-bridge mosfet and IGBT driver with integrated cross-conduction protection logic, said the company. IXD2012NTR, as it will be known, is designed to drive n-channel mosfet gates that need between 10 and 20V, and can supply a minimum of 1.4A pull-up and 1.8A pull-down (both into short-circuits) from either output. Typical figures are 1.9 and 2.3A ...
At last, some ‘spare’ time this weekend, and I learned two things about SCR dc motor control: Permanent magnet dc motors need a chunky inductor in series with them if they are fed from an SCR (thyristor) based mains power controller. It is (probably!) possible to safely interface an Arduino to such an SCR controller. This was the result of ...
Microchip has achieved JANSF qualification for a 100V n-channel mosfet to to 300krad (Si) TID (total ionising dose), and completed its family of radiation-hardened power mosfets to MIL-PRF-19500/746 slash-sheet specification. “The JANS qualification represents the highest level of screening and acceptance requirements, ensuring the superior performance, quality and reliability of discrete semiconductors for aerospace, defense and spaceflight applications,” according to ...
SemiQ has released three 1.2kV three-phase silicon carbide mosfet bridges in 62.8 x 33.8 x 15mm press-fit six-pack modules. 20mΩ 263W GCMX020A120B2T1P 40mΩ 160W GCMX040A120B2T1P 80mΩ 103W GCMX080A120B2T1P Power in this list is the maximum allowable when the case is at 25°C and the junctions are at their maximum of 175°C. Each is tested to over 1,350V with 100% wafer-level ...
Rohm has created three n-channel power mosfets in 5 x 6mm DFN packaging. RS7E200BG is a 30V mosfet optimised for both secondary-side ac-dc conversion and hot-swap controllers in 12V enterprise server power supplies. RS7N200BH is an 80V mosfet optimised for secondary ac-dc conversion in 48V server power supplies, as is RS7N160BH. “The DFN5060-8S package increases the internal die size area ...
Power mosfet and wafer-maker IceMos Technology has pulled-in $22m of series-E funding, including $7.5m from 57 Stars, and money from un-named “earlier stage USA investors” and a “London-based investor”, said IceMos Headquartered in Arizona, IceMos has manufacturing in Northern Ireland, research in Arizona and a design center in Tokyo. Its wafer products include active layers attached to handle wafers using ...
Vishay is claiming industry’s lowest Rds(on).Qg and Rds(on).Co(er) figures-of-merit for its latest 650V super-junction mosfet. The typical figures are 3.74ΩnC and 8ΩpF respectively. SiHK050N65E is an n-channel device aimed at power factor correction and subsequent dc-dc converter blocks up to 6kW. Typical on-resistance is 48mΩ (25°C, 10Vgs) and gate charge can be 78nC (16A, 520V, 10Vgs). “The device addresses 200 ...
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