Silicon Carbide

Rhopoint Components is to supply a 1.2kV 260A three-phase silicon carbide power module for electric vehicles. Made by Cissoid and called CMT-PLA3SB12340, it can supply its 26A at 90°C, and up to 340A at 25°C. This is a complete power module, including output-to-baseplate (5kVdc for 1min) and input-to-output (3kV for 1min) isolation, power supplies to feed the secondary side gate ...

Toshiba has introduced a set of industrial-grade 650V SiC mosfets in 8 x 8mm DFN packaging. Of the four new devices, the company picks TW054V65C as its poster child for low turn-on and turn-off losses: 122 ad 58μJ respectively when a pair are used in a 400V 20A half-bridge* – said to be ~55% and 25% less than the company’s ...

US car maker Rivian has signed up Infineon to supply traction inverter power modules, microcontrollers and power ICs for its ‘R2’ vehicle platform, expecting to start in 2026. The power modules will be in Infineon’s HybridPack Drive G2 format (pictured) and include both silicon and silicon carbide components. Along with these, Rivian has picked infineon’s established TC3x MCUs, not not ...

Power component maker Cissoid has teamed up with automotive engineering services provider Edag Group to develop SiC traction inverters for electric mobility. “This collaboration brings together Cissoid’s expertise in silicon carbide power semiconductor modules and controls with EDAG’s know-how in the design, integration and validation of electric powertrains,” according to Cissoid. “The two companies aim to offer e-mobility OEMs and ...

At PCIM in Nuremberg today, Power Integrations revealed five 800V automotive power supply reference designs for its 1,700V InnoSwitch3-AQ flyback dc-dc converter IC: RDK-994Q – 35W 40 to 1kVdc input, 24V output, low-profile traction inverter gate-drive or emergency PSU RDK-1039Q – 18W planar transformer traction inverter gate driver or emergency PSU (pictured) RDK-1054Q – 120W planar transformer PSU to eliminate ...

SemiQ is aiming at solar inverters with 1,200V SiC mosfets that are avalanche tested to 800mJ, some co-packaged with silicon carbide Schottky diodes – all have intrinsic reverse diodes. There are four devices: GCMS008C120S1-E1 8.4mΩ with Schottky GCMX008C120S1-E1 8.4mΩ GCMS016C120S1-E1 16.5mΩ with Schottky GCMX016C120S1-E1 16.5mΩ The resistance figures here are the channel on-resistance. In addition, two more are avalanche tested ...

SemiQ has released three 1.2kV three-phase silicon carbide mosfet bridges in 62.8 x 33.8 x 15mm press-fit six-pack modules. 20mΩ 263W GCMX020A120B2T1P 40mΩ 160W GCMX040A120B2T1P 80mΩ 103W GCMX080A120B2T1P Power in this list is the maximum allowable when the case is at 25°C and the junctions are at their maximum of 175°C. Each is tested to over 1,350V with 100% wafer-level ...

Diodes has introduced some 650V SiC Schottky diodes, rated at 4, 6, 8, 10 or 12A. Called the DSCxxA065LP series, they come in a 8 x 8 x 1mm T-DFN8080-4 package. The company claims a leading Qc x Vf figure-of-merit, but does not include the numbers in its data sheets, so Electronics Weekly unleashed its calculator to find typical 25°C ...

Nexperia has launched a 1,200V 30mΩ silicon carbide mosfet in a top-side-cooled plastic package with a 18.5 x 14mm footprint. The leaded package is 3.5mm thick is a SOT8107-2, according to the company, which has branded it ‘X.PAK’. The keads have a 1.27mm pitch. “This package, with its compact form factor, combines the assembly benefits of SMD with the cooling efficiency ...

For the gate drivers of high-power IGBTs, mosfets, SiC mosfets and GaN hemts, Infineon has introduced an isolated power supply IC that can generate asymmetric output voltage rails. Each member of the 2EP1xxR family, as it will be known, has a full bridge of mosfets at its output for driving both ends of a transformer primary, whose secondary can be ...