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Diode

Diode news covers developments in rectifiers, Zener, Schottky, and laser diodes used in power regulation, signal processing, and optical systems. Trends include higher switching efficiency, miniaturized packages, and better thermal management for compact systems. Diodes are foundational in circuit protection, signal routing, and voltage regulation. For Electronics Weekly readers, diode coverage provides design engineers with insights into essential component upgrades that improve reliability, speed, and energy use in electronic products.

ESD protection diodes for 48V vehicles

Nexperia 48V ESD protection diodes web

Nexperia has created ESD protection diodes for 48V vehicle communications networks. “Until now, automotive equipment manufacturers lacked suitable ESD protection solutions specifically designed for 48V data lines,” claimed Nexperia head of protection devices Alexander Benedix. “As a result, they often had to rely on workarounds – either including an additional 12 V power rail or connecting several lower-voltage protection diodes ...

Sensors Converge: X-Fab processes tuned for SPADs

Xfab XH018 4x3 SPAD pixel

X-Fab has improved 25V isolation for better SPAD integration in its 180nm XH018 fab process. 4×3 SPAD arrays: Original Isomos1 and new Isomos2 (right) SPADs – single-photon avalanche diodes – are used as optical receivers in lidar, 3D imaging, depth sensing and quantum communication. The improved isolation module, called Isomos2, improves pixel density and fill factor. “In a typical 4×3 ...

3.5GHz avalanche photodiode infra-red sensors

Phlux InGaAs 30um window avalanch photodiode

Phlux Technology has announced 1550nm avalanche photodiode with a 3.5GHz cut-off. Part of its existing Aura range, the speed increase comes from a reduced die size, down to 30µm from 80µm (1.8GHz) or 200µm (700MHz), which drops capacitance to between 0.15 and 0.4pF. “This makes it ideal for high-speed, time-critical applications, such as those found in gigabit speed optical communications, ...

Avalanche photodiodes for analysis across 320 to 1,000nm

Hamamatsu S17353 series photodiodes

Hamamatsu Photonics has launched a series of avalanche photo diodes that work across 320 to 1,000nm. Sensitivity peaks at 750nm. Called the S17353 series, they share a typical sensitivity of 0.44A/W at 650nm, and the six models vary in photosensitive diameter from 0.2 to 5mm. The smallest has a capacitance of 1pF and can be esxpected to work at 1GHz ...

650V SiC Schottkys from 4A to 12A

Diodes DSCxxA065LP 650V SiC diode

Diodes has introduced some 650V SiC Schottky diodes, rated at 4, 6, 8, 10 or 12A. Called the DSCxxA065LP series, they come in a 8 x 8 x 1mm T-DFN8080-4 package. The company claims a leading Qc x Vf figure-of-merit, but does not include the numbers in its data sheets, so Electronics Weekly unleashed its calculator to find typical 25°C ...

InGaAs photo diodes for 0.9 to 2.6μm

Hamamatsu g1719x InGaAs photo diodes

Hamamatsu has launched a family of InGaAs photodiodes with sensitivity across 0.9 to 2.6μm and with a choice of sensitive areas. “The G1719x series are near-infrared sensors offering high sensitivity and low dark current, comparable to conventional metal packages, while featuring a surface-mounted ceramic design compatible with lead-free re-flow soldering,” according to the company. They are “tailored to meet the ...

75 to 91V 600W TVS for electric vehicle battery management

Littelfuse TPSMB-L TVS

Littelfuse is aiming at electric vehicle battery management systems with its latest transient voltage suppressor diodes. Specifically, the unidirectional diodes in the TPSMB-L series are for protecting analogue front-ends and IC in 14 to 20 cell  sub-assemblies. There are three parts, all rated for 600W 10/1,000μs pulses (0.01% duty cycle) and come in ~3.6 x 5.3mm DO-214AA (SMB) packaging: Reverse ...

4 quadrant NIR photo diode leaks only 5nA

ELFys 4 quadrant IR diode zoomed

ElFys has launched circular four-quadrant near-infra-red detector with a 14mm diameter active area, leading to 38.5mm2 of sensing surface in each quarter. Named QPD-385-Y, the sensor’s dark current is typically 5nA per element (140V bias, 30nA max) with a temperature coefficient of 1.11x/°C. Illuminated with 1.064μm wavelength light, at the same 140V bias typical sensitivity is 640mA/W (500mA/W minimum). Capacitance ...

Edinburgh start-up reveals two camera chips with single-photon pixels and DSP

Singular Photonics Andarta SPAD array

Singular Photonics has spun out of the University of Edinburgh to offer two ultra-sensitive camera chips based on SPADs – single-photon avalanche detectors. Both have in-sensor digital signal processing. Development has been lead by Professor Robert Henderson, head of Edinburgh’s CMOS Sensors and Systems Group, and a pioneer of SPAD-based image sensors: he co-designed one in 2005, and in 2013 ...

320GHz resonant tunnelling transmit and receive diodes

Rohm Terahertz tx and rx 785

Rohm is sampling 320GHz resonant tunneling transmit and receive diodes in 4 x 4.3mm PLCC packaging, borrowed from LED production. “Terahertz waves are anticipated to be applied to non-destructive testing, imaging and sensing in the medical and healthcare sectors, as well as potentially fast communication technologies,” according to the company. The die within measure 500 x 500μm and are capable ...