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X-Fab has improved 25V isolation for better SPAD integration in its 180nm XH018 fab process. 4×3 SPAD arrays: Original Isomos1 and new Isomos2 (right) SPADs – single-photon avalanche diodes – are used as optical receivers in lidar, 3D imaging, depth sensing and quantum communication. The improved isolation module, called Isomos2, improves pixel density and fill factor. “In a typical 4×3 ...

Toshiba has created a pair of highspeed photo relays for pin-switching in semiconductor test equipment. “Improved infrared LEDs and optimised photodiode arrays in these models enable switch-on times to be reduced to 150µs while maintaining signal quality,” according to distributor Rutronik, which is stocking the parts. “In addition, the S-VSON4T package saves space on the circuit board.” – it measures ...

Phlux Technology has announced 1550nm avalanche photodiode with a 3.5GHz cut-off. Part of its existing Aura range, the speed increase comes from a reduced die size, down to 30µm from 80µm (1.8GHz) or 200µm (700MHz), which drops capacitance to between 0.15 and 0.4pF. “This makes it ideal for high-speed, time-critical applications, such as those found in gigabit speed optical communications, ...

Hamamatsu Photonics has launched a series of avalanche photo diodes that work across 320 to 1,000nm. Sensitivity peaks at 750nm. Called the S17353 series, they share a typical sensitivity of 0.44A/W at 650nm, and the six models vary in photosensitive diameter from 0.2 to 5mm. The smallest has a capacitance of 1pF and can be esxpected to work at 1GHz ...

Hamamatsu has launched a family of InGaAs photodiodes with sensitivity across 0.9 to 2.6μm and with a choice of sensitive areas. “The G1719x series are near-infrared sensors offering high sensitivity and low dark current, comparable to conventional metal packages, while featuring a surface-mounted ceramic design compatible with lead-free re-flow soldering,” according to the company. They are “tailored to meet the ...

Toshiba Electronics has introduced a 60V 1A single-contact photo-relay in a 2.6 x 7mm 4pad SO4 package. Called TLP3640A, it can switch 60Vdc or 60Vac peak, with a typical on-resistance of 0.14Ω and maximum off-state leakage of 1µA. 100ms pulses of up to 3A can be carried. Operation is over -40 to +110°C, and de-rating starts at 25°C, dropping linearly ...

ElFys has launched circular four-quadrant near-infra-red detector with a 14mm diameter active area, leading to 38.5mm2 of sensing surface in each quarter. Named QPD-385-Y, the sensor’s dark current is typically 5nA per element (140V bias, 30nA max) with a temperature coefficient of 1.11x/°C. Illuminated with 1.064μm wavelength light, at the same 140V bias typical sensitivity is 640mA/W (500mA/W minimum). Capacitance ...

Singular Photonics has spun out of the University of Edinburgh to offer two ultra-sensitive camera chips based on SPADs – single-photon avalanche detectors. Both have in-sensor digital signal processing. Development has been lead by Professor Robert Henderson, head of Edinburgh’s CMOS Sensors and Systems Group, and a pioneer of SPAD-based image sensors: he co-designed one in 2005, and in 2013 ...

Toshiba has released a “high-speed” low-voltage photo-relay “particularly suitable for the pin electronics of semiconductor testers”, it said. High-speed? “Turn-on switching time is below 80μs,” according to Toshiba. “Compared to the previous generation – TLP3450 – this represents a 40% improvement.” It has a single normally-open ‘contact’, consisting of back-to-back mosfets making it suitable for switching ac or dc signals. ...

Toshiba is aiming at industrial programmable logic controllers with fast surface-mount photocouplers that have hysteresis in the signal path. They are amplified types with threshold detection and an open-drain output. Operation is across -40 to +125°C and the secondary side will run from between 2.7 and 5.5V, consuming ~1mA. Operation is specified at 3.3 and 5V. Input-referred hysteresis is typically ...