Analog Devices has created a pair of 22V stereo Class-D audio amplifier that idle at 6mA and shut-down to microamps. MAX98415A and MAX98425A are similar, and both including envelope tracking control that saves power by instructing an external dc-dc converter to provide the amplifiers main power input with just enough voltage for clean output signals. The difference between the two ...
Amplifier
Amplifier news focuses on advancements in analog and digital amplification technologies used in audio, RF, and power electronics. Topics include high-efficiency Class D amplifiers, low-noise designs, and integrated amplifier modules for portable and industrial applications. Amplifiers are critical for signal conditioning and power delivery in communications, medical devices, and consumer electronics. For Electronics Weekly readers, amplifier updates provide essential information on component innovation, design best practices, and integration strategies to improve system performance and energy efficiency.
1% current sense amplifier ICs for high or low-side measurement
Rohm has created a set of six current sense amplifiers with AEC-Q100 qualification for automotive use. They work with external shunt resistors, and there are two basic types: one (BD1423xFVJ-C) that can sense across the common-mode range of -14 to +80V and runs from 2.7 to 18V, and the other (BD1422xG-C) that can sense across -14 to +40V and runs ...
IMS: 500W 50GHz GaN amplifer
Filtronic is aiming at satellite up-links with a 500W V-band linear RF amplifier. Called Prometheus, it was unveiled at the International Microwave Symposium this week. I combines gallium nitride (GaN) semiconductor with the company’s Cerus 32 solid-state power amplifiers. Bandwidth is 5.2GHz from 47.2 to 52.4GHz range, and typical saturated output power is 57dBm (500W) after a typical gain of 70dB. ...
Linear RF amplifier covers 3.3 – 4.2GHz
Mouser Electronics is stocking a 5G linear RF amplifier from Qorvo. QPA9822 is designed for 32-node mMIMO (massive multiple-input and multiple-output) antenna systems found in wideband 5G NR (new radio) with instantaneous signal bandwidths up to 530MHz, “making it ideally suited for the N77 band”, according to Qorvo. Ports are internally match to 50Ω over the 3.3 – 4.2GHz operating ...
2.1MHz low-side current sense amplifier
STMicroelectronics has introduced a 2.1MHz bandwidth low-side current-measurement amplifier in a 6-lead SOT23 pacakge. Dubbed TSC1801, it is aimed at motor control, solar power and automotive power conditioning. “The amplifier’s fast response allows pulse-by-pulse current control even in very high-frequency power-management systems,” according to the company, as well as “rapid over-current detection, protecting sensitive output-stage components against being damaged in ...
5-8GHz GaAs pHEMT linear amplifier in 1.5 x 1.5mm
Component distributor Richardson RFPD is stocking a 5 to 8GHz GaAs pHEMT low noise linear amplifier from Guerrilla RF, and has added it to its design support service. Measuring 1.5 x 1.5mm (DFN-6), GRF2110 is aimed at WiFi 6/6E, small cell and wireless infrastructure. It operates from 2.7 to 6V, drawing 70mA at 5V. Power is applied to the output ...
700W/channel Class-D audio amp design with GaN output
EPC has used GaN transistors to create a high-power Class-D two-channel audio power amplifier design. Instantiated in evaluation kit EPC9192, it is capable of pushing 700W/channel into 4Ω (or 2Ω) or 350W/channel into 8Ω. Bridging the two channels results in 1.4kW drive into 4 to 8Ω. Key components, per channel, are a pair of 200V EPC2307 GaN transistors on a ...
Need a fast wide-voltage current feedback amplifier?
Need to lay your hands on a 1,300V/µs amplifier module that can output ±12V into heavy loads? Look no further than headphone amplifier boards based on TI’s TPA6120A2, which are available all over the internet. I can take no credit for this discovery – it was pointed out in 2015 by tszaboo on this EEVblog community forum. In the IC, ...
24.25 – 30.5GHz RF PA, LNA and T-R switch in 4 x 5mm QFN
United Monolithic Semiconductors has introduced a 24.25 – 30.5GHz combined output power amplifier, input low-noise amplifier and transit-receive switch. Called CHC6054-QQA, it is manufactured from AlGaN/GaN-on-SiC (gallium nitride on silicon carbide) and gallium arsenide die, both from 150mm wafers. Packaging is 4 x 5mm QFN. It “typically exhibits an Rx gain of 18dB with a noise figure of 3.2dB, and ...
Free papers introduce IMFET, IC and discrete RF amplifiers
Component distributor Richardson RFPD has prepared a couple of documents on the options available for designers of RF amplifiers. Rather than in-depth, they are a useful introduction to the different possibilities of discrete RF transistors, impedance-matched FETs (IMFETs), and integrated circuit RF amplifiers (MMICs), with component examples picked multiple manufactures whose products it stocks. The papers are: Discrete transistor, IMFET ...