EPC

With USB Power Delivery in mind, EPC has designed a 180W GaN dc-dc converter evaluation board. Its two-phase power section occupies only 24 x 24mm, using both sides of the board and ignoring input and output bulk capacitors. Called EPC91109 and intended to implement USB-PD 3.1, it delivers 12, 16 or 20V from an input range of 20 to 36V. ...

EPC aims to displace silicon mosfets from secondary-side synchronous rectifiers with its latest 40V GaN power transistor, designed specifically for 48V to 12V LLC dc-dc converters. “With the EPC2366, and upcoming lower voltage parts, we are expanding the GaN beach-head across low-voltage applications that have long been dominated by silicon,” said EPC CEO Alex Lidow. Packaged in 3.3 x 2.6mm ...

EPC has introduced an evaluation board implementing a 40Arms (60A peak) three-phase inverter that will run from 30V to 130V. Called EPC91200, it is “suitable for 80  and 110V battery systems commonly used in industrial automation, agricultural machinery and material handling equipment like forklifts,” according to the company. The inverter is designed around EPC’s 150V 3mΩ EPC2305 GaN HEMT, a ...

EPC is aiming at USB-C PD applications 50V 8.5mΩ GaN transistor with a 1.8mm2 footprint. EPC2057 measures 1.5 x 1.2mm and can handle 9.6A continuously (25°C) and 66A single 300µs pulses (25°C). With such a tiny package, thermals are important. According to the data sheet, junction-to-case thermal resistance is 2.3°C/W, then it is 7°C/W junction-to-board, 72.5°C/W junction to ambient on ...

EPC is aiming at satellites with an application note on four-phase dc-dc point-of load converters using multiple 26 x 19mm modules. The note, AN005, picks a radiation-specified current-mode PWM controller from Texas Instruments (TPS7H5001-SP) as a source of PWM waveforms. Each TPS7H5001-SP can produce two pairs of upper and lower PWMs for a total of two phases, and TPS7H5001-SP has ...

EPC has used GaN transistors to create a high-power Class-D two-channel audio power amplifier design. Instantiated in evaluation kit EPC9192, it is capable of pushing 700W/channel into 4Ω (or 2Ω) or 350W/channel into 8Ω. Bridging the two channels results in 1.4kW drive into 4 to 8Ω. Key components, per channel, are a pair of 200V EPC2307 GaN transistors on a ...

EPC is claiming “the lowest on-resistance GaN FET on the market” for its 1mΩ 100V EPC2361, which comes in a 3 x 5mm QFN package with top and bottom cooling. 1mΩ is at 50A 25°C with 5V on the gate, and rises to ~1.8mΩ at the max operating temperature of 150°C (minimum is -40°C). The preliminary data sheet has no ...

EPC has created a GaN transistor dc-dc converter demo board that converts an input between 36 and 60V to a regulated 13V 16A output. Called EPC9195, it is a synchronous buck converter built around a pair of 2.5 x 1.5mm EPC2619 GaN hemts, and an LTC7891 controller IC from Analogue Devices. “48V input is getting popular due to USB PD ...

Efficient Power Conversion has added two 40V GaN transistors to its radiation-hardened high-reliability portfolio. EPC7001 has 4mΩ on-resistance, 60A (250A 300µs pulse 25°C) capacity and occupies 7mm2 EPC7002 turns on to 14.5mΩ and can handle 10A (62A 300µs pulse 25°C) through its 1.87mm2 footprint “EPC’s rad hard devices exhibit superior resistance to radiation compared to traditional silicon solutions,” said EPC. ...

To get the best out of GaN power transistors, which are far faster than silicon or silicon carbide transistors, microwave design techniques including RF simulation is essential, according to Cambridge start-up QPT. Final assembly, EMC screen partially lifted The alternative is to slow operation until the advantages of GaN fade away, or to risk durability as unseen ultra-fast overshoot and ...