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IQE

IQE, Quinas complete UltraRAM industrialisation project for AI

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IQE and Quinas Technology say they have successfully completed their £1.1m UltraRAM industrialisation project. This involved developing a scalable gallium antimonide (GaSb) epitaxy for memory devices. In July 2024 they were awarded the year’s funding by Innovate UK to take UltraRAM further towards mass production. Quinas Technology is the startup founded by IQE and the universities of Lancaster and Cardiff. ...

IQE and X-Fab hook up for GaN

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IQE and X-FAB have signed a Joint Development Agreement (JDA) to create a European-based GaN Power device platform solution. With an initial two-year scope of work, IQE and X-FAB will collaborate to develop a 650V GaN device. The agreement will leverage IQE’s GaN epitaxy design and process expertise, along with X-FAB’s technology development and device fabrication capabilities to offer an ...

Quinas gets £1.1m to produce UltraRAM

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Quinas, the startup founded by IQE and the universities of Lancaster and Cardiff, has received £1.1 million from Innovate UK to take UltraRAM further towards mass production. Invented by Lancaster physics professor Manus Hayne, UltraRAM technology is non-volatile with the speed, energy-efficiency, and endurance of  DRAM. Most of the funding for the one-year project will be spent at IQE which ...

IQE and Cardiff University fund new chairs and researchers

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IQE and Cardiff University are to establish two new chairs in compound semiconductor technology – one in the university’s physics and astronomy department and the other in the School of Engineering. They will have access to the Institute for Compound Semiconductors based at the University’s Translational Research Hub. Two postdoctoral researchers and at least six PhD students will be funded ...

IQE adds to wafer supply chain

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IQE has signed a multi-year agreement with Advanced Wireless Semiconductor Company (“AWSC”), for the supply of epiwafers for wireless applications.  This three-year supply agreement covers epitaxial wafers spanning a range of AWSC’s wireless products, including those which enable 4G and 5G mobile handsets and WiFi products.  The agreement provides IQE with diversification opportunities into mass market power amplifier products. IQE and ...

IQE hooks up with SK siltron

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IQE  has entered into a strategic collaboration agreement with SK siltron for the development and commercialisation of compound semiconductor products. This formalises a strategic agreement to develop business in the Asia market, leveraging SK siltron’s substrate expertise with IQE’s epitaxy capabilities. IQE and SK siltron will develop and deliver epiwafers based on GaN on SiC for radio frequency applications in ...

IQE H1 EBITDA up 6%

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IQE reported H1 EBITDA of  of £12.3 million up 6% from 2021’s £11.6 million on revenue up 8.4% y-o-y at £86.2 million and an operating loss of £7.4 million compared to the H1 2021 loss of  £1.9 million. Wireless revenue was £46.6 million (H1 2021: £41.6m) up 12.0%. Photonics revenue was £38.5m (H1 2021: £36.4m) up 5.7%. CMOS++ revenue was ...

IQE signs long term wafer supply deal

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IQE, the compound semiconductor wafer supplier, has signed a multi-year agreement with its long-term partner, photonics specialist Lumentum, for the supply of epiwafers supporting 3D Sensing, LiDAR for automotive and optical networking applications. Effective immediately, the multi-year agreement is focused on high volume production of epiwafers which will be used across Lumentum’s portfolio of  laser products, in particular to enable LiDAR ...

IQE claims first commercial 8” VCSEL epiwafer

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IQE, the compound semiconductor wafer supplier, claims to have the world’s first commercially available 200 mm (8”) VCSEL epiwafer. The wafers will be used in the wireless, sensing and display markets. IQE’s 200mm epiwafers will enable a step-change in unit economics for compound semiconductors, leading to the expansion of the market for IQE. The increase in wafer size will expand ...

UK made: 650V 200mm GaN foundry process for automotive in Wales

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The UK government is backing the Compound Semiconductor Centre and Newport Wafer Fab to develop a 200mm Gallium Nitride power transistor foundry process. Both these organisations are inside the compound semiconductor cluster in South Wales. Coordinated jointly by the Centre and Fab, the intention is to deliver a 650V GaN-on-silicon HEMTs (all GaN power transistors are high electron mobility transistors) ...